Measurement method, device and system of MOS process corner of chip
A MOS process and process corner technology, which is used in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as complex MOS process corner methods, and achieve the effect of complex solutions and convenient measurement.
Active Publication Date: 2017-04-26
GREE ELECTRIC APPLIANCES INC
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[0004] The embodiment of the present invention provides a method, device and system for measuring the MOS process angle of a chip, so as to at least solve the technical problem that the existing method for measuring the MOS process angle of a chip is relatively complicated
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[0030] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0031] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circums...
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The present invention discloses a measurement method, device and system of an MOS process corner of a chip. The method comprises: detecting the driving voltage of a chip to be measured, wherein the driving voltage is the voltage of an input end of a voltage-controlled oscillator in the phase-locked loop of the chip to be measured; determining whether the driving voltage is located in a stable state or not; comparing the size of the driving voltage and the size of the process angle determination threshold when the driving voltage is located in the stable state, and obtaining a comparison result, wherein the process angle determination threshold is configured to distinguish the types of the process angles of the chip to be measured; and determining the MOS process angle of the chip according to the comparison result. The technical problem is solved that the method of the MOS process angle of the measured chip is complicated in prior art.
Description
technical field [0001] The invention relates to the field of measuring the MOS process angle of a chip, in particular to a method, device and system for measuring the MOS process angle of a chip. Background technique [0002] In the process of integrated circuit manufacturing, due to the deviation of the process, the produced chips have different process angles, and the performance of each module in the chip is significantly changed by the deviation of the process angle. In order to achieve the required performance, it is necessary to measure and fine-tuning, figure 1 It is a structural diagram of a measuring circuit of the NMOS process angle of a chip according to the prior art. The circuit consists of a bias circuit and a judgment circuit. Its working principle is that a constant current source Ibn that does not change with the process angle provides the NMOS The current bias generates voltage Vgsn. The voltage of Vgsn varies with the process angle. For NMOS, the maximum ...
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IPC IPC(8): H01L21/66
CPCH01L22/14
Inventor 彭新朝易冬柏张亮徐以军冯玉明李建勋殷惠萍谢育桦周佳
Owner GREE ELECTRIC APPLIANCES INC