Structure and Formation Method of Semiconductor Device Structure

Abstract

Embodiments of the present invention provide structures and methods of forming semiconductor device structures. A semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a gate dielectric layer, a work function layer, and a conductive filler over the work function layer. The semiconductor device structure also includes a dielectric layer covering the fin structure. The dielectric layer is in direct contact with the conductive filler.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly to the structure and formation method of semiconductor device structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs. Each generation has smaller and more complex circuits than the previous generation. [0003] During IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. Such downscaling processes typically provide benefits through increased yield efficiencies and reduced associated costs. [0004] However, these advances have increased the complexity of handling and manufacturing ICs. Manufacturing processes continue to become more d...

AI Technical Summary

Problems solved by technology

[0004] However, these advances have increased the complexity of handling and manufacturing IC

Manufacturing processes continue to become more difficult due to ever-shrinking component sizes

Therefore, it is a challenge to form reliable semiconductor devices with smaller and smaller dimensions

Images