Graphene continuous growth equipment with vertically arranged high-temperature process chamber

A high-temperature process, graphene technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of affecting the growth efficiency of graphene, not considering the sealing device to affect the uniform distribution of gas in the process chamber, and it is difficult to achieve high quality Graphene controllable preparation and other issues to achieve the effect of solving freedom, reducing impact, and ensuring quality

Active Publication Date: 2020-01-03
CHONGQING GRAPHENE TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, although patents have begun to study roll-to-roll graphene production equipment and processes, it is difficult to achieve controllable production of high-quality graphene because only one high-temperature process chamber is set up, and annealing and growth are carried out at the same time.
For a high-temperature process chamber, if roll-to-roll high-temperature annealing is performed first, and then rolled back to grow roll-to-roll graphene, the growth efficiency of graphene will be seriously affected.
In addition, the previous patents did not consider the impact of high temperature heat radiation on the sealing device and the uniform distribution of gas in the process chamber

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene continuous growth equipment with vertically arranged high-temperature process chamber
  • Graphene continuous growth equipment with vertically arranged high-temperature process chamber
  • Graphene continuous growth equipment with vertically arranged high-temperature process chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0044] Such as figure 1 , 2 , 3, the graphene continuous growth equipment vertically arranged in the high-temperature process chamber includes a discharge cooling chamber 1 and a receiving cooling chamber 4; a graphene growth substrate discharge roller is arranged in the discharge cooling chamber 1 11 and the guide roller 12 in the discharging cooling area, the receiving cooling chamber 4 is provided with a long graphene substrate receiving roller 41 and the receiving cooling chamber guide roller 42; the discharging cooling chamber 1 is provided with a vacuum pump 7 , the receiving cooling chamber 4 is provided with a vacuum pump 7 .

[0045] The graphene continuous growth equipment arranged vertically in the high-temperature process chamber also includes a first high-temperature process chamber 2, a second high-temperature process chamber 3, and a transition chamber 5; the two ends of the first high-temperature process chamber 2 and the second high-temperature process chambe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses continuous graphene growth equipment with a vertically arranged high-temperature process cavity, and aims to reduce the influence of the gravity to the formation quality of graphene. The continuous graphene growth equipment comprises a vacuum pump, a discharged material cooling cavity, a collected material cooling cavity, a transition cavity, a first high-temperature process cavity and a second high-temperature process cavity, wherein the vacuum pump is used for vacuuming the discharged material cooling cavity and the collected material cooling cavity; the first high-temperature process cavity and the second high-temperature process cavity are both vertically arranged; flow evening thermal-insulating devices are arranged at two ends of the first high-temperature process cavity and the second high-temperature process cavity; both the first high-temperature process cavity and the second high-temperature process cavity are provided with heaters; and a graphene growth substrate is placed on a graphene growth substrate discharge roller, passes through a discharged material cooling zone guide roller, the first high-temperature process cavity, the transition cavity, the second high-temperature process cavity and a collected material cooling cavity guide roller, and is finally coiled onto a graphene substrate collecting roller. By adopting the continuous graphene growth equipment, the influence of the gravity to the product quality can be reduced, the final quality of a graphene film can be ensured, and the production efficiency can be improved.

Description

technical field [0001] The invention relates to a graphene growth device, in particular to a graphene continuous growth device with vertically arranged high-temperature process chambers. Background technique [0002] It is well known that although graphene is only one carbon atomic layer thick, due to its own structural characteristics, it shows the best in many worlds, such as the thinnest, lightest, toughest, and smallest resistivity. Graphene is called the material world. "Black Gold", the "King of New Materials" in the 21st century. [0003] The large-scale preparation of graphene thin films, after extensive research in recent years, chemical vapor deposition is one of the most promising methods for large-scale preparation of graphene thin films. The CVD method to prepare high-quality graphene film is to heat and decompose the carbon source into activated carbon groups under a vacuum condition of about 1000 degrees, and then further decompose on transition metal substra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/02C23C16/54C23C16/26
CPCC23C16/26C23C16/545C30B25/025C30B29/02
Inventor 李占成伍俊史浩飞李昕黄德萍段银武张永娜余杰
Owner CHONGQING GRAPHENE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products