Super junction semiconductor device with terminal protection zone and manufacturing method thereof
A terminal protection area and super-junction semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of product local charge imbalance and affect the withstand voltage efficiency of the device terminal area, and achieve device terminal protection The structural design and manufacturing steps are simple, the design is simple, and the effect of high pressure resistance
Active Publication Date: 2017-05-24
WUXI NCE POWER
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This morphology will also cause local charge imbalance of the product, affecting the withstand voltage efficiency of the terminal area of the device
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[0046] The present invention will be further described below in conjunction with specific drawings.
[0047] Taking an N-type trench-gate super-junction MOSFET device as an example, the super-junction semiconductor device and its manufacturing method in the specific terminal protection region of the present invention are described.
[0048] like figure 1 As shown, it is a top plan view of a super junction semiconductor device with a terminal protection region according to the present invention, the super junction semiconductor device includes a device region 01, a straight edge terminal protection region 02, and a corner terminal protection region 03, wherein the device region 01 is surrounded by four Each corner terminal protection area 03 is adjacent to two straight-edge terminal protection areas 02 perpendicular to each other.
[0049] In the cross-sectional direction of the super junction semiconductor device, such as Figure 2-4 As shown, the semiconductor material of ...
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The present invention relates to a super junction semiconductor device with a terminal protection zone and a manufacturing method thereof. The device comprises a device region, a straight flange terminal protection region and a corner terminal protection region on the lookdown plane. At the straight flange terminal protection region, a super junction formed by a second prism with a first conduction type and a second prism with a second conduction type is extended from the surface of the semiconductor along the thickness direction into a drifting layer with the first conduction type and is alternately and regularly arranged. At the corner terminal protection region, a plurality of super junction sets formed by one pair or several pairs of third prisms with the first conduction type and one pair or several pairs of third prisms with the second conduction type are mutually vertical and are not arranged in the interaction mode. the electricity is not mutually communicated between different third prisms with the second conduction type, and the third prisms with the second conduction type are not electrically communicated with the second prism with the second conduction type of the straight flange terminal protection region. The device provided by the invention is small in size of the terminal and high in withstand voltage, the corner terminal protection region is simple in design and easy to realize the charge balance.
Description
technical field [0001] The invention relates to a super junction semiconductor device and a manufacturing method thereof, in particular to a super junction semiconductor device with a terminal protection area and a manufacturing method thereof. Background technique [0002] In the field of medium and high voltage power semiconductor devices, super junction structure (Super Junction) has been widely used. Compared with traditional power semiconductor devices, semiconductor devices with super junction structure can obtain a better compromise relationship between device withstand voltage and on-resistance . Taking a 600V super-junction MOSFET device as an example, the on-resistance of a super-junction MOSFET device with the same voltage specification and chip area is only about 20-30% of that of a conventional VDMOS. Super-junction semiconductor devices generally include an active area that provides a current flow path and a terminal protection area that ensures the withstand ...
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IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/0615H01L29/0634H01L29/66484H01L29/66666H01L29/7827H01L29/7831
Inventor 朱袁正李宗清
Owner WUXI NCE POWER