A kind of p-type znmsno amorphous oxide semiconductor thin film and preparation method thereof
A technology of amorphous oxide and amorphous film, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve good material properties and promote development
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Embodiment 1
[0026] (1) With high-purity ZnO, Cu 2 O and SnO powders were used as raw materials, mixed, ground, and N at 1000 °C 2 Sintering under the atmosphere to make ZnCuSnO ceramic sheet as the target material, in which the atomic ratio of Zn, Cu and Sn is 1:0.2:0.3;
[0027] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to 1×10 - 3 Pa;
[0028] (3) Passing Ar-O 2 It is the working gas, the gas pressure is 1.1Pa, Ar-O 2 The flow volume ratio is 10:2, the sputtering power is 120W, and the substrate temperature is 25°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate to obtain p-type ZnCu 0.2 sn 0.3 o 1.4 Amorphous thin film.
[0029] Using quartz as the substrate, p-type ZnCu was prepared according to the above growth steps 0.2 sn 0.3 o 1.4 The film was tested for its structure, ...
Embodiment 2
[0031] (1) With high-purity ZnO, Cu 2 O and SnO powders were used as raw materials, mixed, ground, and N at 1000 °C 2 Sintering under the atmosphere to make ZnCuSnO ceramic sheet as the target material, in which the atomic ratio of Zn, Cu and Sn is 1:0.25:0.4;
[0032] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to 1×10 - 3 Pa;
[0033] (3) Passing Ar-O 2 It is the working gas, the gas pressure is 1.1Pa, Ar-O 2The flow volume ratio is 10:2, the sputtering power is 120W, and the substrate temperature is 150°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate to obtain p-type ZnCu 0.25 sn 0.4 o 1.525 Amorphous thin film.
[0034] Using quartz as the substrate, p-type ZnCu was prepared according to the above growth steps 0.25 sn 0.4 o 1.525 The film was tested for its stru...
Embodiment 3
[0036] (1) With high-purity ZnO, Cu 2 O and SnO powders were used as raw materials, mixed, ground, and N at 1000 °C 2 Sintering under the atmosphere to make ZnCuSnO ceramic sheet as the target material, in which the atomic ratio of Zn, Cu and Sn is 1:0.3:0.5;
[0037] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to 1×10 - 3 Pa;
[0038] (3) Passing Ar-O 2 It is the working gas, the gas pressure is 1.2Pa, Ar-O 2 The flow volume ratio is 10:3, the sputtering power is 130W, and the substrate temperature is 300°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate to obtain p-type ZnCu 0.3 sn 0.5 o 1.65 Amorphous thin film.
[0039] Using quartz as the substrate, p-type ZnCu was prepared according to the above growth steps 0.3 sn 0.5 o 1.65 The film was tested for its structur...
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