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A kind of p-type cumino amorphous oxide semiconductor film and preparation method thereof

A technology of amorphous oxide and semiconductor, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of promoting development, good material characteristics, and good performance

Active Publication Date: 2019-12-31
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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  • A kind of p-type cumino amorphous oxide semiconductor film and preparation method thereof
  • A kind of p-type cumino amorphous oxide semiconductor film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) with high-purity Cu 2 O, Al 2 o 3 and In 2 o 3 The powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make a CuAlInO ceramic sheet as the target, where the atomic ratio of Cu, Al, and In is 1:0.2:0.8;

[0029] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0030] (3) Pass into O 2 As the working gas, the gas pressure is 7Pa, the substrate temperature is 25°C, the target is bombarded with pulsed laser, the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film, and p-type CuAl is obtained. 0.2 In 0.8 o 2 Amorphous thin film.

[0031] Using quartz as the substrate, p-type CuAl was prepared according to the above growth steps 0.2 In 0.8 o 2 The film was tested for its structure, electrical and optical properties. The test results are: the ...

Embodiment 2

[0034] (1) with high-purity Cu 2 O, Al 2 o 3 and In 2 o 3 The powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1050°C to make a CuAlInO ceramic sheet as the target, where the atomic ratio of Cu, Al, and In is 1:0.5:0.5;

[0035] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0036] (3) Pass into O 2 As the working gas, the gas pressure is 10Pa, the substrate temperature is 300°C, the target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type CuAl 0.5 In 0.5 o 2 Amorphous thin film.

[0037] Using quartz as the substrate, p-type CuAl was prepared according to the above growth steps 0.5 In 0.5 o 2 The film was tested for its structure, elec...

Embodiment 3

[0040] (1) with high-purity Cu 2 O, Al 2 o 3 and In 2 o 3 The powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1100°C to make a CuAlInO ceramic sheet as the target, where the atomic ratio of Cu, Al, and In is 1:0.8:0.2;

[0041] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0042] (3) Pass into O 2 As the working gas, the gas pressure is 13Pa, and the substrate temperature is 600°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type CuAl 0.8 In 0.2 o 2 Amorphous thin film.

[0043] Using quartz as the substrate, p-type CuAl was prepared according to the above growth steps 0.8 In 0.2 o 2 The film was tested for its structure, ...

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Abstract

The invention discloses a P-type CuMInO amorphous oxide semiconductor thin film, wherein M is an element selected from B, Al, Ga, Sc and Y in group III, the valence of Cu is +1, the valence of M is +3, the valence of In is +3, Cu, M and In are combined with O to form an amorphous material with P-type conductivity, In has a spherical electron orbit, and electron clouds can be in high coincidence in an amorphous state to function as a hole transport channel. The chemical formula of CuMInO is CuMxInyO2, wherein 0.2<=x<=0.8, 0.2<=y<=0.8, and x+y=1. The invention further provides a preparation method of the P-type CuMInO amorphous oxide semiconductor thin film and an application of the P-type CuMInO amorphous oxide semiconductor thin film serving as a channel layer in a thin-film transistor. The hole concentration of the P-type CuMInO amorphous oxide semiconductor thin film prepared is 10<13>-10<15>cm<-3>, and the visible light transmittance is higher than or equal to 85%. For a P-type amorphous CuMInO TFT prepared with the CuMInO as a channel layer, the on / off ratio is 10<4>-10<5>, and the field effect mobility is 5.2-12.7cm<2> / Vs.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L21/02H01L29/786
CPCH01L21/02422H01L21/02565H01L21/02631H01L29/247H01L29/78693
Inventor 吕建国孟璐
Owner ZHEJIANG UNIV
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