Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of p-type znrhmo amorphous oxide semiconductor thin film and preparation method thereof

A technology of amorphous oxide and semiconductor, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of promoting development and good material properties

Active Publication Date: 2020-05-19
ZHEJIANG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1100°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh and Cu is 1:2:0.5;

[0027] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0028] (3) Pass into O 2 As the working gas, the gas pressure is 10Pa, and the substrate temperature is 25°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film to obtain p-type ZnRh 2 Cu 0.5 o 4.25 Amorphous thin film.

[0029] Using quartz as the substrate, p-type ZnRh was prepared according to the above growth steps 2 Cu 0.5 o 4.25 The film was tested for its structure, electrical and optical properties. The test results are: the film is am...

Embodiment 2

[0031] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1100°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh, and Cu is 1.5:2:1;

[0032] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0033] (3) Pass into O 2As the working gas, the gas pressure is 12Pa, and the substrate temperature is 250°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type ZnRh 2 Cu 0.5 o 4.25 Amorphous thin film.

[0034] Using quartz as the substrate, p-type Zn was prepared according to the above growth steps 1.5 Rh 2 CuO 5 The film was tested for its structure, electrical and...

Embodiment 3

[0036] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1050°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh and Cu is 2:2:1;

[0037] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0038] (3) Pass into O 2 As the working gas, the gas pressure is 13Pa, and the substrate temperature is 500°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Zn 2 Rh 2 CuO 5.5 Amorphous thin film.

[0039] Using quartz as the substrate, p-type Zn was prepared according to the above growth steps 2 Rh 2 CuO 5.5 The film was tested for its structure, electrical and opti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a p-type ZnRhMo amorphous oxide semiconductor film. In ZnRhMo, Zn is Zn(+2), Rh is Rh(+3), and the two are combined with O to form a p-type conductive basal body of a material, wherein M is one from Cu, Ni and Sn and is at a suboxidation chemical state, i.e., when M is Cu, the M is Cu(+1), when M is Ni, the M is Ni(+2), and when M is Sn, the M is Sn(+2); and M is doped in the basal body to form p-type conduction, M acts with Zn and Rh to form a space network structure, and the three communicate with one another at an amorphous state to function as a cavity transmission channel. The invention further discloses a method for preparing the p-type ZnRhMo amorphous oxide semiconductor film. By taking a sintered ZnRhCuO ceramic chip as a target material, a p-type ZnRhCuO amorphous film is prepared by use of a pulse laser depositing method, the cavity concentration is 10<13> to 10<15>cm<-3>, and the visible light transmittance is greater than or equal to 87%. The p-type ZnRhMo amorphous oxide semiconductor film disclosed by the invention can be applied to a p-type amorphous film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L21/02H01L29/786
CPCH01L21/02422H01L21/02565H01L21/02631H01L29/247H01L29/78693
Inventor 吕建国孟璐
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com