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IGBT junction temperature on-line monitoring method and measuring circuit thereof

A technology for measuring circuits and currents, applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., can solve the problems of complex circuit structure and difficult implementation, and achieve the effect of high voltage blocking, high current isolation, and convenient integration.

Inactive Publication Date: 2017-05-31
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention patent application with the application number 201510245724.7 provides a temperature calibration platform and method based on the saturation voltage drop test IGBT junction temperature, but does not provide a circuit and method for real-time monitoring of the IGBT junction temperature in the working state
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  • IGBT junction temperature on-line monitoring method and measuring circuit thereof

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Embodiment Construction

[0023] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0024] The invention provides a method for on-line monitoring of IGBT junction temperature. The monitoring method is as follows: respectively use a temperature-controlled parameter tester to test the IGBTs and diodes of the upper and lower bridge arms of the IGBT module to be tested under different temperatures and forward currents. Measure the voltage drop of the voltage drop, and fit it into a function of the voltage drop with respect to temperature and current, and establish a calibration dat...

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Abstract

The invention discloses an IGBT junction temperature on-line monitoring method and a measuring circuit thereof. The method solves the problem that the existing IGBT junction temperature measurement method cannot realize junction temperature on-line monitoring under a high current condition. The method carries out on-line monitoring on the work state of the IGBT junction temperature through saturation voltage drop. According to the method provided by the invention, the shortcoming of the existing method is overcome; IGBT high voltage blocking is realized; high accuracy saturation pressure drop measurement is carried out; the measuring circuit provided by the invention can simultaneously monitor the temperature of two IGBTs and diode chips of upper and lower bridge arms in an inverter; and the measuring circuit can be easily integrated into the existing IGBT drive circuit to carry out over-temperature protection on an IGBT module.

Description

technical field [0001] The invention relates to an IGBT junction temperature online monitoring method and a measuring circuit thereof. Background technique [0002] The junction temperature is an important parameter in the operation of the IGBT module. The IGBT module itself has a maximum junction temperature limit, generally 125-175°C. If the working junction temperature of the module exceeds the maximum junction temperature limit, it is likely to cause the module to overheat and burn. Threat to the security of system operation. At the same time, the working life of the IGBT is affected by the temperature. The higher the temperature, the greater the temperature fluctuation, and the lower the working life of the IGBT module. If the junction temperature of the IGBT module in the working state can be monitored in real time, on the one hand, the over-temperature protection of the IGBT can be more effective to prevent device failure; Loss is predicted in real time to realize l...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 王志超卢小东徐妙玲季莎崔志勇胡羽中
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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