A method for improving the signal-to-noise ratio of the output image of an electron multiplication ccd camera

An electron multiplying and signal-to-noise ratio technology, applied in image communication, color TV components, TV system components, etc., can solve problems such as insufficient signal-to-noise ratio and insufficient dynamic range, and reduce the number of cables and logic design. Easy, dynamic range-increasing effects

Active Publication Date: 2019-06-18
BEIJING RES INST OF SPATIAL MECHANICAL & ELECTRICAL TECH
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Problems solved by technology

[0004] The technical solution problem of the present invention is: aiming at the problem of insufficient signal-to-noise ratio and insufficient dynamic range in the application of an EMCCD device in outputting a row of image data, a method for realizing improving the signal-to-noise ratio of an electronic multiplication CCD camera output image is provided, which improves SNR

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  • A method for improving the signal-to-noise ratio of the output image of an electron multiplication ccd camera
  • A method for improving the signal-to-noise ratio of the output image of an electron multiplication ccd camera
  • A method for improving the signal-to-noise ratio of the output image of an electron multiplication ccd camera

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[0042] The basic idea of ​​the present invention is to propose a method for improving the signal-to-noise ratio of the output image of the electron multiplication CCD camera. According to the characteristics of the micro-photoelectron multiplication CCD device, the method applies the working mode of continuous vertical transfer and intermittent horizontal transfer, and utilizes the output multi-line The time-delayed addition of digital image data after analog-to-digital conversion of CCD analog signals solves the problems of low signal-to-noise ratio and insufficient dynamic range when single-row analog signal output in the application of electronic multiplier CCD devices, and realizes signal-to-noise ratio and dynamic range improvement. The method of the present invention can be applied to imaging systems of electron multiplier CCDs and other area array CCDs, has the advantages of easy implementation and high precision, can effectively improve the signal-to-noise ratio and inc...

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Abstract

The invention provides a method for improving the signal-to-noise ratio of the output image of an electron multiplication CCD camera. According to the characteristics of the micro-photoelectron multiplication CCD device, the method adopts the working mode of continuous vertical transfer and intermittent horizontal transfer, and uses the output multi-line CCD analog signal to perform analog The time-delayed addition of digital image data after digital conversion solves the problems of low signal-to-noise ratio and insufficient dynamic range when single-line analog signal output in the application of electronic multiplier CCD devices, and realizes the improvement of signal-to-noise ratio and dynamic range. The method of the present invention can be applied to imaging systems of electron multiplier CCDs and other area array CCDs, has the advantages of easy implementation and high precision, can effectively improve the signal-to-noise ratio and increase the dynamic range, thereby improving image quality and enhancing the imaging system. performance.

Description

technical field [0001] The invention belongs to the technical field of aerospace remote sensors, and relates to a method for improving the signal-to-noise ratio of an output image of an electron multiplication CCD camera, which can be applied to an electron multiplication CCD and other area array CCD imaging systems, and has the advantages of easy implementation and high precision. It can effectively improve the signal-to-noise ratio and increase the dynamic range, thereby improving the image quality and improving the performance of the imaging system. Background technique [0002] The structure of the electron multiplying CCD (EMCCD for short) is similar to that of a common CCD, except that a special multiplying register is added between the readout register and the output amplifier. The structure of the multiplication register is similar to that of the readout register, except that one phase electrode is replaced by a pair of electrodes, one is applied with a DC voltage, a...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/353H04N5/355H04N5/357
CPCH04N25/53H04N25/57H04N25/60
Inventor 王鹏雷宁刘琦徐磊程芸翟国芳胡雨婷苏健李浩洋丁晓燕
Owner BEIJING RES INST OF SPATIAL MECHANICAL & ELECTRICAL TECH
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