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A low noise amplifier

A low-noise amplifier, transistor technology, used in amplifiers, differential amplifiers, amplifier types, etc., to achieve the effect of small voltage drop and large gain

Active Publication Date: 2020-09-04
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for many protocols, the noise of this type of noise cancellation LNA is still unacceptable

Method used

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  • A low noise amplifier
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Embodiment Construction

[0027] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0028] The following is attached Figure 1~4 The present invention will be described in further detail with specific examples. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0029] see figure 1 , a low noise amplifier in this embodiment includes: a first transistor M1, a second transistor M2, a third transistor M3, a first load resistor R1, a second load resistor R2, a feedback resistor R F , equiva...

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Abstract

The invention provides a low noise amplifier. The low noise amplifier includes that one end of an equivalent RF signal source is connected to one end of equivalent RF resistance; the other end of the equivalent RF signal source is connected to one end of a first coupling capacitor; the other end of the first coupling capacitor is connected with one end of a second coupling capacitor, a drain electrode of a first transistor and a drain electrode of a third transistor in one node, the other end of the second coupling capacitor is connected with one end of feedback resistance and a grid electrode of a second transistor in one node; the other end of the feedback resistance is connected to a second bias voltage; a grid electrode of the first transistor is connected to a first bias voltage, a drain electrode of the first transistor is connected to a first differential signal output end and one end of first load resistance; the drain electrode of the second transistor is connected to a second differential signal output end and one end of second load resistance; the other end of the first load resistance and the other end of the second load resistance are connected to a positive electrode of power source; a grid electrode of the third transistor is connected to the drain electrode of the first transistor.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a low-noise amplifier. Background technique [0002] The Low Noise Amplifier (LNA) is one of the important modules in the RF transceiver. It is mainly used in the communication system to amplify the signal received from the antenna, so as to facilitate the subsequent receiver circuit processing. [0003] Since the signal from the antenna is generally very weak, the low noise amplifier is generally located very close to the antenna to reduce signal loss. It is precisely because the noise amplifier is located at the first stage of the entire receiver close to the antenna, its characteristics directly affect the quality of the signal received by the entire receiver. In order to ensure that the signal received by the antenna can be correctly recovered in the final stage of the receiver, a good LNA needs to amplify the signal while generating the lowest possible noise and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26H03F3/19H03F3/45
CPCH03F1/26H03F3/19H03F3/45179H03F2200/372H03F2200/451
Inventor 李琛任铮段杰斌史汉臣
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT