A detection system for silicon waveguide admittance

Abstract

The invention discloses a silicon waveguide admittance detection system, which includes an AC power supply, a sensor and a silicon waveguide admittance detection circuit. The sensor includes an excitation electrode, an induction electrode, a substrate, a silicon layer and a covering layer, and the All materials are SiO 2 , the substrate, the silicon layer and the cover layer are stacked in order from bottom to top, the excitation electrode and the sensing electrode are arranged on the cover layer at intervals, the excitation electrode is connected to the positive pole of the AC power supply, the sensing electrode is connected to the input of the silicon waveguide admittance detection circuit The sensor also includes a ground electrode. The ground electrode is arranged on the covering layer and is located between the excitation electrode and the sensing electrode. The dimensions of the ground electrode, the excitation electrode, and the sensing electrode are exactly the same, and the distance between the ground electrode and the excitation electrode is equal to The distance between the ground electrode and the sensing electrode, the ground electrode is grounded; the advantage is that the detection accuracy is high.

Description

technical field [0001] The invention relates to a detection system, in particular to a silicon waveguide admittance detection system. Background technique [0002] Due to its small size, low energy consumption, large bandwidth and other advantages, optical integrated chips are increasingly favored in the fields of optical interconnection and optical communication. The optical power inside the silicon waveguide is one of the important technical indicators for testing the stability of the optical integrated chip. How to detect the optical power inside the silicon waveguide is a difficult point in the design of the current optical integrated chip. The change of the silicon waveguide admittance reflects the change of the internal optical power of the silicon waveguide. At present, the detection of the internal optical power of the silicon waveguide is mainly realized through the detection of the silicon waveguide admittance. [0003] The existing detection system of silicon wav...

AI Technical Summary

Problems solved by technology

However, the existing silicon waveguide admittance detection circuit is greatly affected by low-frequency flicker noise, and the accuracy of the obtained voltage signal representing the change information of the conductance is not high, so that the resolution of the silicon waveguide admittance is not high.

Therefore, the existing silicon waveguide admittance detection system is affected by the sensitivity of the sensor and the resolution of the silicon waveguide admittance detection circuit, and finally the detection accuracy of the silicon waveguide admittance is not high

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