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Method of improving etching process endpoint monitoring accuracy and etching method

An endpoint monitoring and accuracy technology, applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problem that the stability of the etching process needs to be improved, and the monitoring equipment is difficult to accurately judge the etching. end point etc.

Inactive Publication Date: 2017-06-27
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art Bosch (Bosch) etching process, the stability of the etching process still needs to be improved
Moreover, with the continuous improvement of Bosch's etching process, it is becoming more and more difficult for existing monitoring equipment to accurately judge the etching end point

Method used

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  • Method of improving etching process endpoint monitoring accuracy and etching method

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Embodiment approach 1

[0042] The first embodiment of the present invention relates to a method for improving the accuracy of endpoint monitoring of the Bosch etching process. The endpoint monitoring can be implemented using commonly used optical emission spectroscopy (OES) in-situ detection technology or other conventional technologies. The methods to improve the accuracy of endpoint monitoring, such as figure 1 Shown, including:

[0043] Step S1: Obtain a process menu of the Bosch etching process.

[0044] The process menu can be a process menu accessed in advance in the etching device and whose validity has been verified, and the process menu can be retrieved and displayed through the operation interface of the etching device. The subsequent steps (such as steps S2 and S3) to change and adjust the process menu can also be completed through this operation interface.

[0045] Since it is a Bosch etching process, there are at least alternate etching steps and deposition steps in the process menu. For exa...

Embodiment approach 2

[0054] The second embodiment of the present invention relates to a method for etching using the Bosch method. The etching method can not only improve the stability of the etching result, but also facilitate the monitoring of the etching end point, thereby obtaining a more accurate etching end point. The method includes alternate etching steps and deposition steps, and is characterized in that the etching step and the deposition step are performed under the same pressure value.

[0055] The second embodiment has a lot in common with the first embodiment. Therefore, how to adjust their air pressure values ​​to be the same, and how to compensate for changes in air pressure values, etc., can refer to Embodiment 1.

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Abstract

The invention discloses a method of improving Bosch etching process endpoint monitoring accuracy and a method of using a Bosch method for etching, so as to improve the process result stability and the etching endpoint monitoring result accuracy. The method of improving Bosch etching process endpoint monitoring accuracy comprises steps: a process menu of the Bosch etching process is acquired; air pressure parameters in certain steps in the process menu are changed to enable the air pressure in an etching step and the air pressure in a deposition step in the process menu to be the same; in the step of changing the air pressure parameters, other parameters in the step in the process menu are adjusted to compensate changes of the air pressure parameters; according to the step of changing the air pressure parameters and adjusting other parameters, a new process menu is acquired; and the new process menu is executed for etching.

Description

Technical field [0001] The invention relates to a method for etching using the Bosch method to improve the stability of the process result, and also relates to a method for improving the accuracy of endpoint monitoring of the Bosch method etching process. Background technique [0002] With the continuous development of semiconductor technology, the current feature size of semiconductor devices has become very small. It is more and more difficult to increase the number of semiconductor devices in a two-dimensional package structure. Therefore, three-dimensional packaging has become a way to effectively improve chip integration. Degree method. The current three-dimensional packaging includes die stacking based on gold wire bonding, package stacking and three-dimensional (3D) stacking based on Through Silicon Via (TSV). Among them, the three-dimensional stacking technology using through silicon vias has the following three advantages: (1) high-density integration; (2) greatly short...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/67
CPCH01L22/10H01L21/67253H01L22/20
Inventor 黄智林黄秋平王洪青严利均倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA