Thin-film packaging structure of OLED device and preparation method thereof

A thin-film packaging and device technology, which is applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as penetration, and achieve the effects of simple operation, improved water and oxygen penetration, and improved packaging effect

Inactive Publication Date: 2017-07-18
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 2. Defect penetration caused by particles on the surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film packaging structure of OLED device and preparation method thereof
  • Thin-film packaging structure of OLED device and preparation method thereof
  • Thin-film packaging structure of OLED device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Prepared as Figure 4 The film packaging structure of the OLED device shown:

[0055] (1) Deposit silicon nitride on the OLED substrate by chemical vapor deposition method, and prepare the underlying inorganic thin film layer on the OLED substrate;

[0056] (2) Add silicon nitride to hexamethyl dimethyl silyl ether, stir and mix to prepare an organic buffer layer membrane liquid, and then apply the membrane liquid on the underlying inorganic thin film layer by the dazzling coating method, and dry it to prepare Obtain an organic buffer layer doped with inorganic hydrophobic particles;

[0057] (3) Depositing silicon oxide on the organic buffer layer prepared in step (2) by chemical vapor deposition, and preparing an inorganic thin film layer on the organic buffer layer;

[0058] (4) Coat the hexamethyl simethicone solution on the inorganic thin film layer prepared in step (3) by a spin coating method, and dry to obtain an organic buffer layer without inorganic hydrophobic partic...

Embodiment 2

[0061] Prepared as Figure 5 Package structure shown:

[0062] (1) Deposit silicon nitride on the OLED substrate by atomic layer deposition, and prepare the bottom inorganic thin film layer on the OLED substrate;

[0063] (2) Coating polystyrene on the bottom inorganic film layer by a spin coating method, and drying to prepare an organic buffer layer without inorganic hydrophobic particles;

[0064] (3) Depositing silicon oxide on the organic buffer layer prepared in step (2) by chemical vapor deposition, and preparing an inorganic thin film layer on the organic buffer layer;

[0065] (4) Add aluminum nitride to the polystyrene and mix it with ultrasound to prepare an organic buffer layer film solution, and then prepare the inorganic thin film layer prepared in step (3) to be doped with inorganic hydrophobic particles by the pulling method The organic buffer layer;

[0066] (5) Depositing silicon nitride on the organic buffer layer prepared in step (4) by atomic layer deposition, and p...

Embodiment 3

[0068] Prepared as Image 6 Package structure shown:

[0069] (1) Deposit silicon oxide on the OLED substrate by chemical vapor deposition, and prepare the underlying inorganic thin film layer on the OLED substrate;

[0070] (2) Add silicon nitride to polystyrene, stir and mix to prepare an organic buffer layer membrane liquid, and then print the membrane liquid on the underlying inorganic thin film layer by inkjet printing to produce inorganic hydrophobic particles The organic buffer layer;

[0071] (3) Depositing silicon oxide on the organic buffer layer prepared in step (2) by chemical vapor deposition, and preparing an inorganic thin film layer on the organic buffer layer;

[0072] (4) Repeat steps (2)-(3) twice;

[0073] (5) Depositing silicon carbonitride on the organic buffer layer prepared in step (4) by atomic layer deposition, and preparing a top inorganic thin film layer on the organic buffer layer.

[0074] For any numerical value mentioned in the present invention, if there...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a thin-film packaging structure of an OLED device. The thin-film packaging structure comprises the components of a bottom inorganic thin-film layer and a top inorganic thin-film layer on an OLED substrate; and one or more organic buffer layers between the bottom inorganic thin-film layer and the top inorganic thin-film layer, wherein the plurality of inorganic buffer layers are separated through the inorganic thin-films, wherein inorganic hydrophobic particles are doped in at least one organic buffer layer. According to the thin-film packaging structure of the OLED device, through doping the inorganic hydrophobic particles in the buffer layer, penetration paths of water and oxygen in the thin-film packaging structure is prolonged, or the penetration path are difficultly formed, thereby improving water and oxygen penetration and improving packaging effect. The invention further provides a preparation method of the thin-film packaging structure of the OLED device. The thin-film packaging structure of the OLED device and the preparation method thereof have advantages of simple operation, easily available raw material, and easy large-scale industrial production.

Description

Technical field [0001] The invention relates to a thin film packaging structure of an OLED device and a preparation method thereof, and belongs to the field of OLED device packaging. Background technique [0002] Self-luminous devices such as OLED (Organic Electroluminescent Diode) have the characteristics of self-luminescence, wide viewing angle, long life, energy saving and environmental protection. At present, the OLED display and lighting industry is developing rapidly and has become an important display design. [0003] Among them, thin-film packaging is a preferred packaging method for self-luminous devices such as OLEDs. By depositing various functional layer films on the surface of the OLED substrate, it achieves the purpose of water and oxygen barrier without using other cover plates, and it is easy to realize flexible display. [0004] However, the main problem existing in the existing film packaging is that the water and oxygen permeability is currently difficult to reach ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/8445H10K50/844H10K71/00
Inventor 何超
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap