High voltage inverted LED chip structure and manufacturing method thereof

A technology of LED chip and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. It can solve the problems of chip unit leakage light-emitting area, reduction, and metal fracture at the groove connection, so as to reduce the packaging process Difficulty, strong compatibility, smooth bridging effects
CN106981497AInactive Publication Date: 2017-07-25盐城东紫光电科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
盐城东紫光电科技有限公司
Publication Date
2017-07-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a high-voltage flip-chip LED chip structure and a manufacturing method thereof, comprising: a growth substrate deposited with a GaN epitaxial layer; ion implantation to form a plurality of isolation regions, so that the GaN epitaxial layer forms a plurality of mutually independent chips unit, then perform mesa step etching to form a metal reflective layer; form a barrier layer; form a first insulating layer; form an interconnect metal layer; form a second insulating layer; The high-voltage flip-chip LED chip of the present invention forms a plurality of isolation regions by ion implantation in the GaN epitaxial layer, which can greatly reduce the loss of the light-emitting diode light-emitting area caused by etching, and the isolation regions formed by ion implantation can make the chip The bridge between chips can be more gentle and easier to bridge between chips; in addition, the height difference between the chip isolation area and other areas is small, the N and P electrode pads are not easy to conduct, the insulation effect is good, and the chip packaging yield is high. It reduces the difficulty of the packaging process and is more compatible with the packaging bracket.
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Description

Technical field

[0001] The invention belongs to the field of semiconductor lighting, and relates to an LED chip structure and a manufacturing method thereof, in particular to a high-voltage flip-chip LED chip structure and a manufacturing method thereof. Background technique

[0002] Light Emitting Diode (Light Emitting Diode, LED for short) is a semiconductor solid-state light-emitting device, which is made using the principle of semiconductor P-N junction electroluminescence. LED devices have good photoelectric properties such as low turn-on voltage, small size, fast response, good stability, long life, and pollution-free. Therefore, they are more and more widely used in outdoor and indoor lighting, backlighting, display, traffic indication and other fields.

[0003] There are three types of LED chip structures: horizontal structure (formal chip), vertical structure (vertical structure chip) and flip-chip structure (flip chip); flip-chip structure means that the P and N electrode...

Claims

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