High voltage inverted LED chip structure and manufacturing method thereof

Abstract

The invention provides a high-voltage flip-chip LED chip structure and a manufacturing method thereof, comprising: a growth substrate deposited with a GaN epitaxial layer; ion implantation to form a plurality of isolation regions, so that the GaN epitaxial layer forms a plurality of mutually independent chips unit, then perform mesa step etching to form a metal reflective layer; form a barrier layer; form a first insulating layer; form an interconnect metal layer; form a second insulating layer; The high-voltage flip-chip LED chip of the present invention forms a plurality of isolation regions by ion implantation in the GaN epitaxial layer, which can greatly reduce the loss of the light-emitting diode light-emitting area caused by etching, and the isolation regions formed by ion implantation can make the chip The bridge between chips can be more gentle and easier to bridge between chips; in addition, the height difference between the chip isolation area and other areas is small, the N and P electrode pads are not easy to conduct, the insulation effect is good, and the chip packaging yield is high. It reduces the difficulty of the packaging process and is more compatible with the packaging bracket.

Description

Technical field [0001] The invention belongs to the field of semiconductor lighting, and relates to an LED chip structure and a manufacturing method thereof, in particular to a high-voltage flip-chip LED chip structure and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (Light Emitting Diode, LED for short) is a semiconductor solid-state light-emitting device, which is made using the principle of semiconductor P-N junction electroluminescence. LED devices have good photoelectric properties such as low turn-on voltage, small size, fast response, good stability, long life, and pollution-free. Therefore, they are more and more widely used in outdoor and indoor lighting, backlighting, display, traffic indication and other fields. [0003] There are three types of LED chip structures: horizontal structure (formal chip), vertical structure (vertical structure chip) and flip-chip structure (flip chip); flip-chip structure means that the P and N electrode...

AI Technical Summary

Problems solved by technology

[0011] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a high-voltage flip-chip LED chip structure and its manufacturing method, which is used to solve the problem of deep trenches used as isolation regions in the prior art, which are prone to trench junctions. Problems such as metal fracture, leakage between chip units, and reduction of light-emitting area caused by too wide trench width

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