A light emitting diode chip

Abstract

The invention discloses a light emitting diode chip. The chip comprises a semiconductor stack structure. The semiconductor stack structure successively comprises a substrate, a first semiconductor layer, multiple quantum well layers, second semiconductor layers and current expansion layers. The first semiconductor layer is opposite to the second semiconductor layers in electricity conducting type. An open groove in the direction from the current expansion layer to the substrate is arranged in the semiconductor stack structure. The bottom of the open groove is exposed to the first semiconductor layer. A first electrode layer is formed on the first semiconductor layer in the open groove. A second electrode layer is formed, away from one side of the substrate, on the current expansion layer, and comprises a second electrode pin, and multiple extension bodies which are in the same extension directions and are arranged in the direction perpendicular to the extension directions. One end of each second extension body is connected with the pin of the second electrode. According to the invention, uniform distribution of current in the multiple quantum well layers is ensured; shielded photons are enabled to be emitted out through gaps between adjacent two second extension bodies; and light emitting brightness of the light emitting diode chip is improved.

Description

technical field [0001] The present invention relates to the technical field of light-emitting diodes, and more specifically, to a light-emitting diode chip. Background technique [0002] Light Emitting Diode (LED), as a new generation of environmentally friendly light source replacing incandescent lamps and fluorescent lamps, is widely used in lighting, display and backlighting and other fields. Compared with traditional lighting sources, LEDs have many advantages such as high efficiency, low energy consumption, long life, no pollution, small size, and rich colors. Generally, a light-emitting diode chip mainly includes a semiconductor stack structure, and a P-type electrode and an N-type electrode in contact with the semiconductor stack structure. The semiconductor stack structure sequentially includes a substrate, an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer and the current spreading layer, steps are formed on the semiconducto...

AI Technical Summary

Problems solved by technology

When the existing light-emitting diode chip is working, the current injected between the P-type electrode and the N-type electrode is relatively concentrated in the multi-quantum well layer, resulting in a decrease in the luminous brightness of the light-emitting diode chip; and, due to the large area of ​​the P-type electrode Blocking the light emitted by the LED chip further reduces the luminance of the LED chip

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