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Substrate processing chamber including multiple gas injection points and dual injector

A syringe and substrate technology, applied in electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., can solve problems such as incompatible gases cannot be used

Active Publication Date: 2017-08-04
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Problems encountered when using this method include not being able to use incompatible gases (such as pyrophoric and oxidizing gases) because these gases chemically react in the gas lines before reaching the substrate processing chamber

Method used

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  • Substrate processing chamber including multiple gas injection points and dual injector
  • Substrate processing chamber including multiple gas injection points and dual injector
  • Substrate processing chamber including multiple gas injection points and dual injector

Examples

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Embodiment Construction

[0090] Systems and methods according to the present disclosure allow for adjustments to gas species and gas delivery paths in a substrate processing system. In some examples, the substrate processing system performs etching or ashing. Multiple gas injection locations are provided, and each gas injection location is provided by a gas delivery system or a gas metering system. Adjustment of gas delivery at each gas injection location can be used to adjust etch or ash rate uniformity and / or selectivity across the substrate.

[0091] In some examples, multiple injection locations allow adjustment of gas delivery such that a volume of ionized species can be moved to a specific injection location simply by adjusting the flow rate. In other examples, incompatible gases flow through different injection locations to prevent mixing of the gases before they reach the substrate processing chamber. This also allows separate injection of shielding or carrier gases without mixing with the m...

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PUM

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Abstract

The invention relates to a substrate processing chamber including multiple gas injection points and a dual injector. A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 275,837, filed January 7, 2016. The entire disclosure of the above application is incorporated herein by reference. technical field [0003] The present disclosure relates to substrate processing systems and methods, and more particularly to substrate processing systems and methods for etching and ashing substrates. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. To the extent described in this Background section and aspects that would not otherwise be considered a description of prior art at the time of filing, the work of the presently named inventors is neither expressly nor implicitly admitted to be relevant to the present invention. Published prior art. [0005] Substrate processing systems can be used to etch or ash films on substrates suc...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/32082H01J37/3244H01J37/32449H01J37/32357H01J37/32422H01J37/32174H01L21/02315H01L21/0234H01L21/3065H01L21/67207H05H1/46C23C16/455C23C16/45508C23C16/4558H01J37/32715H01J2237/334H01L21/67069H01L21/6831
Inventor 詹森·李·特雷德韦尔艾夫林·安格洛夫琳达·马尔克斯克里斯汀·西拉迪
Owner LAM RES CORP
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