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Miniature piezoresistive pressure sensor

A pressure sensor, piezoresistive technology, applied in the measurement of fluid pressure, the measurement of the property force of the application of piezoelectric resistance material, the measurement of fluid pressure by changing the ohmic resistance, etc., can solve the problems of complex design and so on

Active Publication Date: 2019-04-19
ASIA PACIFIC MICROSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because this structure involves stress film layer stacking, it is more complicated to design

Method used

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  • Miniature piezoresistive pressure sensor
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  • Miniature piezoresistive pressure sensor

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Embodiment Construction

[0025] Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numerals.

[0026] refer to figure 1 and figure 2 , a first embodiment of the miniature piezoresistive pressure sensor of the present invention includes a substrate 1 and an element structure layer 2 . The substrate 1 forms a vibration space 11 and an insulating layer 12 . The element structure layer 2 is located on the substrate 1 and has an upper surface 21, and a groove 22 corresponding to the position of the vibration space 11 is formed on the upper surface 21, thereby forming a gap between the groove 22 and the Vibrable membrane 23 between vibration spaces 11 . That is to say, the vibration space 11 provides a space where the membrane 23 can vibrate. The groove 22 is defined by the film 23 and a side wall 24 connecting the film 23 and the upper surface 21 . The element structure layer 2 also forms a piezoresistive...

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Abstract

A miniature piezoresistive pressure sensor includes a base material and an element structure layer. The substrate forms a vibration space. The element structure layer is located on the base material and has an upper surface, and a groove corresponding to the position of the vibration space is formed on the upper surface, thereby forming a vibrator between the groove and the vibration space film. The groove is defined by the film and a side wall connecting the film and the upper surface. The element structure layer also forms a piezoresistive region with a lower ion concentration and a wire region with a higher ion concentration by ion implantation, wherein the piezoresistive region extends from the film through the side wall surface to the upper surface, and the wire region connected with the piezoresistive region and distributed on the upper surface.

Description

technical field [0001] The invention relates to a miniature piezoresistive pressure sensor, in particular to a miniature piezoresistive pressure sensor manufactured by ion implantation technology. Background technique [0002] Ion implantation technology is one of the mature manufacturing processes of piezoresistive pressure sensors, and is used to form piezoresistive elements and wires. However, since the junction depth produced by the ion implantation technique can reach several μm, leakage is likely to occur when the concentration of implanted ions is high and the device layer (or film) is thin. However, in many applications, such as miniature pressure sensors set in cardiac catheters, the volume is usually small, so the area of ​​the film used to sense the pressure is limited, so the design must adjust the film thickness to 1-3 μm to meet the required Output sensitivity, if the structure of the general piezoresistive pressure sensor is directly reduced in size and minia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18
CPCG01L1/18G01L9/0055G01L9/0044G01L9/0047G01L9/06
Inventor 殷宏林江政祎黄煜哲
Owner ASIA PACIFIC MICROSYST
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