Silicon dioxide SAB removing method

A silicon dioxide and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as over-etching, leakage, and difficult to remove
CN103646874AInactive Publication Date: 2014-03-19SHANGHAI HUALI MICROELECTRONICS CORP
4 Cites 1 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2014-03-19
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a silicon dioxide SAB removing method which comprises the following steps: providing a flash memory wafer, wherein a device on the flash chip is covered by silicon dioxide SAB; reacting NH3 and HF steam with silicon dioxide SAB on the flash memory wafer to generate (NH4)2SiF6; and heating the reacted flash memory wafer to volatilize (NH4)2SiF6 to obtain a flash memory wafer of which silicon dioxide SAB is removed. According to the method, first, NH3 and HF steam are reacted with a silicon dioxide SAB film on the flash memory wafer to generate (NH4)2SiF6, and then, the flash memory wafer is heated to remove the silicon dioxide SAB film, thereby reducing undercut and avoiding leakage risks.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for removing silicon dioxide SAB. Background technique

[0002] At present, with the development of semiconductor devices, self-aligned metal silicides such as self-aligned nickel silicon and titanium silicon are introduced to produce silicides that can be well integrated with exposed sources, drains, and polysilicon gates. Silicon (Si) alignment. This is because metallic nickel (Ni), titanium (Ti) or cobalt (Co) can react with silicon, but not with silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitride (Si 3 N 4 ) or silicon oxynitride (SiON) reaction. Therefore, Ni, Ti or Co will only find the part of silicon to react, and for silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitride (Si 3 N 4 ) or the part covered with silicon oxynitride (SiON) will not react, just like Ni, Ti or Co will...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More