55results about How to "Reduce undercutting" patented technology

A system and method for forming a novel C4 solder bump for BLM (Ball Limiting Metallurgy) includes a novel damascene technique is implemented to eliminate the Cu undercut problem and improve the C4 pitch. In the process, a barrier layer metal stack is deposited above a metal pad layer. A top layer of the barrier layer metals (e.g., Cu) is patterned by CMP. Only bottom layers of the barrier metal stack are patterned by a wet etching. The wet etch time for the Cu-based metals is greatly reduced resulting in a reduced undercut. This allows the pitch of the C4 solder bumps to be reduced. An alternate method includes use of multiple vias at the solder bump terminal.

A method of reducing buried oxide undercut during FinFET formation includes forming a fin on a buried oxide layer and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a sacrificial oxide layer over the fin and source and drain regions and forming a gate over the fin, wherein the sacrificial oxide layer reduces undercutting of the buried oxide layer during gate formation.

An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azole, the azole including nitrogen atoms only as heteroatoms residing in a ring. A method for producing a wiring by etching of copper or copper alloys, includes the step of: etching a portion of a copper layer on an electrical insulative member that is not covered with an etching resist using the above-described etchant so as to form the wiring. Thereby, a fine and dense wiring pattern with reduced undercut can be formed.

The invention relates to etching liquid capable of selectively etching a copper nickel multilayer film in a semiconductor device with an oxide semiconductor layer and the copper nickel multilayer film. The etching liquid contains hydrogen peroxide, an etching inhibitor, a chelating agent, organic acid, a hydrogen peroxide stabilizer, a pH modifier and a water medium; according to total weight of the etching liquid, hydrogen peroxide is 5-30%; according to total weight of the etching liquid, the etching inhibitor is 0.01-5%; according to total weight of the etching liquid, the chelating agent is 0.1-5%; according to total weight of the etching liquid, the organic acid is 1-10%; according to total weight of the etching liquid, the hydrogen peroxide stabilizer is 0.01-0.1%; the content of the pH modifier enables the pH value of the etching liquid to be 3-5; and the balance is the water medium. After etching by the etching liquid, the wiring section shape is excellent, and the undercutting phenomenon can be effectively prevented.

The invention discloses a method for controlling laser welding. The method comprises the following steps that 1, the weld seam width w of a workpiece to be welded is measured; 2, the locus of laser welding is controlled as x0=x1+delta*cos beta, y0=y1+delta*sin beta, x=x0+R*cos alpha, y=y0+R*sin alpha, wherein w=2R+phi, x0 and y0 serve as coordinates of a point on a straight line, x1 and y1 serve as starting point coordinates of the straight line, delta serves as a point distance of the straight line, beta serves as an inclination angle of the straight line, R serves as a shaking radius, alpha serves as a polar angle, x and y serve as coordinates of a point on a circle (that is a helical line locus), phi serves as a welding point diameter, and delta is smaller than phi. According to the method for controlling laser welding, the locus of a welding helical line is adjusted by adjusting the shaking radius and the point distance for changes of the weld seam width, therefore, a molten pool can flow more fully, the problems of weld seam depression, undercut, point burst and needle holes which are brought by traditional laser welding can be effectively solved, the welding performance is improved, and the quality rate of products is improved.

The invention provides a manufacturing method of a shield gate trench power device. The method comprises the following steps of: providing a substrate, forming at least one first trench in a device unit region of the substrate, forming at least one second trench in an electrode connection region of the substrate, and forming first dielectric layers on the side walls and the bottoms of the first trench and the second trench; forming a shielding gate in the first trench, partially filling the first trench with the shielding gate, and filling the second trench with a conductive material; forminga second dielectric layer which fills the first trench and covers the surface of the substrate and the conductive material; removing the second dielectric layer on the device unit region by adopting adry isotropic etching process, and exposing a part of the first trench; forming a gate in the first trench. According to the invention, before the gate is formed, the second dielectric layer on the device unit region is removed through dry isotropic etching, and part of the first trench is exposed, so that compared with the traditional wet etching removal, the process time is shortened, and the undercutting problem is effectively reduced and even avoided.

The invention discloses a copper-selective etching solution prepared from a copper oxidizing solution and a copper chelating solution. The copper oxidizing solution is prepared from an oxidizing agent and/or water, the copper chelating solution is prepared from oxalate, amino carboxylic acid and water, and the pH value of the copper-selective etching solution is 6.0-8.5; the copper-selective etching solution can selectively and uniformly etch copper. The invention further discloses a titanium-selective etching solution prepared from a titanium oxidizing solution and a titanium chelating solution. The titanium oxidizing solution is prepared from hydrogen peroxide and/or water, the titanium chelating solution is prepared from a phosphorous acid chelating agent, a copper anticorrosive agent, inorganic base and water, and the pH value of the titanium-selective etching solution is 7-10; the titanium-selective etching solution can selectively and uniformly etch titanium. In the manufacturing process of lead-free solder bumps, lead-free solder bumps with the good size reproducibility can be conveniently and quickly manufactured on a semiconductor substrate by using the copper-selective etching solution and the titanium-selective etching solution for etching.

The invention provides a method for processing micro slot array on borosilicate glass surface which comprises sputtering Chromium copper seed layer onto the surface of cleaned boron-silicon glass sheets, forming mask window of processed glass deep groove array through photo-etching, placing the boron-silicon glass sheets into Chromium copper seed layer in the etching solution removing window, striping the analytical pure acetone through ultrasound, employing a plating method for electroplating copper masks, then plating gold masks onto the copper masks, etching continuously so as to obtain micro-trench array with smooth bottoms on the surface of the boron-silicon glass.

The invention relates to a method for preparing an anticorrosive metal mask, in particular to a method for preparing a metal mask resistant to the corrosion of hydrofluoric acid corrosive liquid. The invention aims to solve the problems of undercut holes, local warping, peeling defects and the like of the conventional corroded mask. The method particularly comprises the following steps of: a, cleaning, namely performing corrosion soaking on a substrate to be coated in hydrofluoric acid and hydrogen peroxide mixed liquid or sulfuric acid and hydrogen peroxide mixed liquid, and performing megasonic cleaning on the substrate; and b, coating, namely (1) performing ion bombardment on Ar on the surface of the substrate; (2) sequentially coating a Cr film and a Cu film on the surface of the substrate under the condition of the temperature of between 100 and 220 DEG C, the sputtering pressure of 0.3 to 0.8 Pa and the sputtering power of 1.9 to 2.5 Kw; and (3) repeating the step (2) to coat the Cr film and the Cu film on the surface of the substrate again to form a double-layered or multilayered Cr/Cu metal mask. The method effectively reduces pinhole undercutting due to fine particles and film layer defects, improves the adhesion of the mask and effectively removes stress.

A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF₃ and Cl₂. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl₄ as an example of a silicon and chlorine containing passivating gas may be added for additional selectivity.

The invention provides a TFT substrate and a manufacturing method thereof. The TFT substrate comprises a base substrate, a metal layer arranged on the base substrate, an insulating layer arranged on the base substrate and the metal layer, a bottom common electrode arranged on the insulating layer, and a protective layer arranged on the insulating layer and the bottom common electrode. The insulating layer has first via holes exposing the metal layer. The bottom common electrode has second via holes formed in areas corresponding to the first via holes. The thickness of the edge of the bottom common electrode near the second via holes gradually decreases along the direction near the second via holes, so that the upwarp angle of the edge of the bottom common electrode near the second via holes is reduced, and the probability of bottom cutting is reduced. Therefore, the risk of peeling of the film formed on the bottom common electrode is reduced, the yield of the TFT substrate is improved,and the display effect of the LCD panel is good.

Monocyclic chlorine based inductively coupled plasma deep etching processes for the rapid micromachining of titanium substrates and titanium devices so produced are disclosed. The method parameters are adjustable to simultaneously vary etch rate, mask selectivity, and surface roughness and can be applied to titanium substrates having a wide variety of thicknesses to produce high aspect ratio features, smooth sidewalls, and smooth surfaces. The titanium microdevices so produced exhibit beneficially high fracture toughness, biocompatibility and are robust and able to withstand harsh environments making them useful in a wide variety of applications including microelectronics, micromechanical devices, MEMS, and biological devices that may be used in vivo.

The invention relates to the technical field of software upgrading, and provides an automobile frame welding parameter optimization method. The method comprises the following steps: (1) constructing amathematical model of double-pulse welding current, wherein the mathematical model is represented by the formula; and (2) determining an optimal variable of the continuous adjustment of the welding current in a fixed-frequency mode, wherein the optimal variable is the number n1 of pulses in a strong pulse group and the number n2 of pulses in a weak pulse group. With the automobile frame welding parameter optimization method, the welding reliability of a new energy automobile is improved, and welding parameters are optimized according to the welding mathematical model of the new energy automobile and a related data fitting algorithm, so that the quality of a welding seam is guaranteed, and splashing and undercut phenomena are greatly reduced. In the welding process of a welding machine with the self-learning function, regular and stable current and stable arc length stretching rhythm are ensured, and no arc breaking phenomenon occurs, so that the welding cost of the new energy automobile is reduced.

The invention relates to the technical field of a boiler inside pipe system structure, in particular to a boiler inside pipe system anti-abrasion cover structure with the advantage that phenomena of edge engaging, burn through and the like possibly caused during the spot welding of an anti-abrasion cover can be effectively reduced, the pipe system anti-abrasion capability is enhanced, the pipe system operation time is prolonged, and the boiler pipe system hidden danger is reduced. The boiler inside pipe system anti-abrasion cover structure comprises a pipe and an anti-abrasion cover, and is characterized in that a matched pipe clamp is arranged outside the pipe in a clamping way, and the anti-abrasion cover is fixedly arranged on the pipe clamp in a spot welding way.

The invention relates to an efficient welding method for one side welding both-side formation. The details of the efficient welding method are as follows: workpiece blanking is carried out; a workpiece after blanking is polished and assembled to form a workpiece to be welded; a digital pulse electric arc welder selects a pulse electric arc mode and completes root pass welding of the workpiece to be welded; then, the digital pulse electric arc welder selects a spray electric arc mode and completes hot weld layer root pass welding of the workpiece to be welded; after hot weld layer root pass welding is completed, the digital pulse electric arc welder selects the spray electric arc mode and completes filling root pass welding of the workpiece to be welded; after filling root pass welding is completed, the digital pulse electric arc welder selects the spray electric arc mode and completes capping root pass welding of the workpiece to be welded; and after welding is over, a power supply isturned off. The efficient welding method can realize one side welding both-side formation, has the advantages of high cladding efficiency and good operability, and solves the technical problems that one side welding both-side formation of traditional TKY welding joints is not high in welding quality, low in operation efficiency and incapable of realizing continuous operation.