Etching liquid for copper nickel multilayer film

A multi-layer film and etching solution technology, applied in the field of etching, can solve the problem that the etching solution cannot be satisfied, and achieve the effect of a simple preparation method

Inactive Publication Date: 2017-10-24
惠州达诚微电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no etching solution that can meet

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The etchant for copper-nickel multilayer film is prepared from the following raw materials:

[0040] 15 parts of hydrogen peroxide, 0.05 part of aminotetrazole, 0.5 part of EDTA, 5 parts of tartaric acid, 0.1 part of phenylurea, adjust the pH to 4 with monoethanolamine, and the balance is deionized water.

Embodiment 2

[0042]The etchant for copper-nickel multilayer film is prepared from the following raw materials:

[0043] 15 parts of hydrogen peroxide, 0.05 part of aminotetrazole, 0.5 part of EDTA, 5 parts of citric acid, 0.1 part of phenylurea, adjust the pH to 4 with monoethanolamine, and the balance is deionized water.

Embodiment 3

[0045] The etchant for copper-nickel multilayer film is prepared from the following raw materials:

[0046] 15 parts of hydrogen peroxide, 0.05 part of BTA, 0.5 part of EDTA, 5 parts of tartaric acid, 0.1 part of phenylurea, adjust the pH to 4 with diethanolamine, and the balance is deionized water.

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PUM

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Abstract

The invention relates to etching liquid capable of selectively etching a copper nickel multilayer film in a semiconductor device with an oxide semiconductor layer and the copper nickel multilayer film. The etching liquid contains hydrogen peroxide, an etching inhibitor, a chelating agent, organic acid, a hydrogen peroxide stabilizer, a pH modifier and a water medium; according to total weight of the etching liquid, hydrogen peroxide is 5-30%; according to total weight of the etching liquid, the etching inhibitor is 0.01-5%; according to total weight of the etching liquid, the chelating agent is 0.1-5%; according to total weight of the etching liquid, the organic acid is 1-10%; according to total weight of the etching liquid, the hydrogen peroxide stabilizer is 0.01-0.1%; the content of the pH modifier enables the pH value of the etching liquid to be 3-5; and the balance is the water medium. After etching by the etching liquid, the wiring section shape is excellent, and the undercutting phenomenon can be effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of etching, and relates to an etching solution, in particular to an etching solution for a copper-nickel multilayer film. Background technique [0002] In the manufacturing process of liquid crystal displays, metals such as copper (Cu), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti) or their alloys are often used as conductive materials. With the increase in size and resolution of displays, it becomes an inevitable development trend to use metal copper (Cu) with low resistance as the conductive material. However, using copper alone as the conductive material has the disadvantage of poor wear resistance, so multilayer metals containing copper are usually used as the conductive material. [0003] Metal nickel has a strong passivation ability, and can quickly form a very thin passivation film on the surface of the workpiece, which can resist the corrosion of the atmosphere and some acids, so the ...

Claims

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Application Information

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IPC IPC(8): C23F1/18C23F1/28
CPCC23F1/18C23F1/28
Inventor 张丽燕卢燕燕
Owner 惠州达诚微电子材料有限公司
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