Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

TFT substrate and manufacturing method thereof

A manufacturing method and substrate technology, which is applied in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve problems such as difficult control of parameters, peeling of protective layer, poor display of liquid crystal panels, etc., to reduce undercut phenomenon and tilt angle Small, well-displayed effects

Active Publication Date: 2020-09-29
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the parameters of the manufacturing process of the TFT substrate are not easy to control, the bottom common electrode 4 often has an undercut phenomenon at the second via hole 41 ′, causing the bottom common electrode 4 to be close to the edge of the second via hole 41 ′. warping, which in turn leads to the phenomenon of peeling (peeling) of the protective layer 5 disposed on the bottom common electrode 4, resulting in poor display of the liquid crystal panel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TFT substrate and manufacturing method thereof
  • TFT substrate and manufacturing method thereof
  • TFT substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0032] The drawings in this application are only schematic diagrams. Unless otherwise specified, they do not mean that the actual thickness ratio, flatness, and shape of each film layer are the same as those in the drawings. There are some differences from the schematic diagram, for example, the shape of the hole and the appearance of the combined part of each film layer will be different from the schematic diagram, which can be understood and known by those skilled in the art. The description of the sequence of process steps and the structure of the film layer in this application only indicates the sequence and relative position of the steps and film layers directly related to the technical problems of this application, and does not mean that ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a TFT substrate and a manufacturing method thereof. The TFT substrate comprises a base substrate, a metal layer arranged on the base substrate, an insulating layer arranged on the base substrate and the metal layer, a bottom common electrode arranged on the insulating layer, and a protective layer arranged on the insulating layer and the bottom common electrode. The insulating layer has first via holes exposing the metal layer. The bottom common electrode has second via holes formed in areas corresponding to the first via holes. The thickness of the edge of the bottom common electrode near the second via holes gradually decreases along the direction near the second via holes, so that the upwarp angle of the edge of the bottom common electrode near the second via holes is reduced, and the probability of bottom cutting is reduced. Therefore, the risk of peeling of the film formed on the bottom common electrode is reduced, the yield of the TFT substrate is improved,and the display effect of the LCD panel is good.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate and a manufacturing method thereof. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to pour liquid crystal molecules between the thin film transistor array substrate (ThinFilm Transistor Array Substrate, TFT Array Substrate) and the color filter substrate (ColorFilter Substrate, CF Substrate), and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/84G02F1/1362
CPCG02F1/136227H01L27/1244H01L27/1259
Inventor 高玲
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com