Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid

A metal mask and corrosion solution technology, which is applied in the field of anti-corrosion metal mask preparation, can solve the problems of local warping, mask corrosion drilling holes, peeling, etc., to improve adhesion, reduce pinhole drilling, Enhance the effect of mechanical locking

Active Publication Date: 2011-04-13
BEIJING AUTOMATION CONTROL EQUIP INST
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems of undercut holes, local warping, and peeling defects after the existing mask is corroded, and propose a method for preparing a metal mask resistant to hydrofluoric acid corrosion solution corrosion

Method used

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  • Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid
  • Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid

Examples

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Effect test

Embodiment 1

[0035] Processing flow such as figure 1 Shown:

[0036] a. Cleaning: Use hydrofluoric acid hydrogen peroxide mixed solution to corrode and soak the quartz crystal at 60-120°C for 5-10 minutes, then use megasonic cleaning for 5-15 minutes.

[0037] b. Coating: (1) Place the cleaned quartz substrate in a magnetron coating machine, firstly bombard the surface of the substrate with Ar ions for 5-10 minutes, and the ion bombardment power is 70-90w; (2) at a temperature of 100- Under the conditions of 220°C, sputtering pressure of 0.3-0.8Pa, and sputtering power of 1.9-2.5Kw, the surface of the substrate is sequentially plated with a Cr film with a thickness of 30nm and a Cu film with a thickness of 300nm; (3) Repeat step (2) again on the substrate The surface is plated with a Cr film with a thickness of 30nm and a Cu film with a thickness of 300nm to form a double-layer Cr / Cu metal mask. It can also be repeated for more layers of metal masking as needed. The thickness of the fil...

Embodiment 2

[0040] a. Cleaning: put sulfuric acid into the hydrogen peroxide mixture, soak and corrode the 7740 glass substrate at 80-120°C for about 8-10 minutes, then use megasonic cleaning for 5-10 minutes.

[0041] b. Coating: (1) Place the cleaned glass substrate in a magnetron coating machine, and first bombard the surface of the glass substrate with Ar ions for 5-7 minutes, with ion bombardment power of 70-80w; (2) at 100- Under the conditions of 150°C, 0.4-0.8Pa, and 1.9-2.3Kw power conditions, the surface of the substrate is sequentially plated with a Cr film with a thickness of 30nm and a Pt film with a thickness of 300nm; A Cr film and a 300nm Pt film form a double-layer Cr / Pt metal mask.

[0042] c. After naturally cooling to room temperature, take out the substrate and place it in a vacuum annealing furnace for annealing.

Embodiment 3

[0044] a. Cleaning: use sulfuric acid and hydrogen peroxide mixture to soak and corrode the 7740 glass substrate at 100-120°C for 5-7 minutes, then use megasonic cleaning for 5-8 minutes.

[0045]b. Coating: (1) Place the cleaned glass substrate in a magnetron coating machine, and first bombard the surface of the substrate with Ar ions for 5-6 minutes, with ion bombardment power of 70-80w; (2) at 120-150 Under the conditions of ℃, 0.6~0.8Pa, 1.9~2.2Kw power conditions, the surface of the substrate is successively plated with a Cr film with a thickness of 30nm and an Au film with a thickness of 300nm; (3) Repeat step (2) to plate a Cr film with a thickness of 30nm on the substrate surface film and a 300nm Au film to form a double-layer Cr / Au metal mask.

[0046] c. After naturally cooling to room temperature, take out the substrate and place it in a vacuum annealing furnace for annealing.

[0047] The method adopts cleaning measures to remove the surface processing metamorphic...

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Abstract

The invention relates to a method for preparing an anticorrosive metal mask, in particular to a method for preparing a metal mask resistant to the corrosion of hydrofluoric acid corrosive liquid. The invention aims to solve the problems of undercut holes, local warping, peeling defects and the like of the conventional corroded mask. The method particularly comprises the following steps of: a, cleaning, namely performing corrosion soaking on a substrate to be coated in hydrofluoric acid and hydrogen peroxide mixed liquid or sulfuric acid and hydrogen peroxide mixed liquid, and performing megasonic cleaning on the substrate; and b, coating, namely (1) performing ion bombardment on Ar on the surface of the substrate; (2) sequentially coating a Cr film and a Cu film on the surface of the substrate under the condition of the temperature of between 100 and 220 DEG C, the sputtering pressure of 0.3 to 0.8 Pa and the sputtering power of 1.9 to 2.5 Kw; and (3) repeating the step (2) to coat the Cr film and the Cu film on the surface of the substrate again to form a double-layered or multilayered Cr/Cu metal mask. The method effectively reduces pinhole undercutting due to fine particles and film layer defects, improves the adhesion of the mask and effectively removes stress.

Description

technical field [0001] The invention relates to a method for preparing an anti-corrosion metal mask, in particular to a method for preparing a metal mask for anti-hydrofluoric acid corrosion solution corrosion. Background technique [0002] Microelectromechanical systems often use crystal material substrates to process various microstructure devices. The processing process mainly includes substrate cleaning, film deposition, photolithography, and corrosion. Cleaning is mainly to remove various impurities on the surface of the substrate; film deposition is to deposit a metal film on the surface of the substrate by means of magnetron sputtering or electron beam evaporation, and its function is to resist the corrosion of corrosive liquid and make electrodes and leads; photolithography It is to transfer the structural graphics and electrode graphics to the substrate; corrosion is an important link in the whole process, which directly affects the structural quality and device per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C15/00
Inventor 唐琼杨军曲蕴杰李佳朱建伟李海燕杨轶博张菁华
Owner BEIJING AUTOMATION CONTROL EQUIP INST
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