Ti-doped cro2 epitaxial thin film and preparation method thereof

Abstract

The invention provides a Ti-doped CrO<2> epitaxial thin film and a preparation method therefor. The preparation method for the Ti-doped CrO<2> epitaxial thin film comprises the following steps of performing uniform mixing on 75-99.99 parts of CrO<3> and 0.01-25 parts of TiF<4> in parts by mass and then loading into a quartz boat, next, putting the quartz boat into a low-temperature region of a dual-temperature tubular furnace, and putting a TiO<2> single crystal substrate into a high temperature region of the dual-temperature tubular furnace; in a condition of continuously pumping O<2> to the tubular furnace at flowing speed of 100-150mL / min, heating the high temperature region to 390-480 DEG C and performing heat preservation; and during performing heat preservation on the high temperature region, heating the low temperature region to 290-310 DEG C, and then performing heat preservation for the high temperature region and the low temperature region for 1.5-3h, namely preparing the Ti-doped CrO<2> epitaxial thin film on the TiO<2> single crystal substrate. According to the preparation method, the temperature section is 390-480 DEG C; the thermal stability of the prepared Ti-doped CrO<2> epitaxial thin film is improved in a relatively high degree, and temperature section overlapping with more high temperature materials can be formed; and therefore, the thin film can be coupled with more high temperature materials to form a multi-layer-film spinning device.

Description

technical field [0001] The present invention belongs to the field of materials. Specifically relates to a Ti-doped CrO 2 Epitaxial thin film and method for its preparation. Background technique [0002] In recent years, spintronics has become one of the focuses of international condensed matter physics and materials science, and has attracted extensive attention. As the simplest ferromagnetic semimetal oxide CrO 2 is a traditional magnetic recording material, CrO 2 It has been confirmed by experiments that it has a spin polarizability close to 100%, and CrO 2 The Curie temperature is as high as 396K. Therefore, CrO2 is considered to be one of the electrode materials with great development potential and ideal spintronic devices. [0003] CrO 2 Although it is a magnetic material with good magnetic properties and a wide range of applications, it is in a metastable state at room temperature and has poor thermal stability. Currently the most commonly used is the O 2 Prep...

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Problems solved by technology

[0003] CrO 2 Although it is a magnetic material with good magnetic properties and a wide range of applications, it is in a metastable state at room temperature and has poor thermal stability.

Currently the most commonly used is the O 2 Preparation of CrO under the atmosphere 2 , but its preparation temperature can only be at 390 o Near C, higher than 400 o Cpure CrO 2 The material begins to decompose and Cr begins to appear in the film 2 o 3 impurity phase, lower than 380 o C, the CrO in the atmosphere 2 not available on TiO 2 Film formation or film formation rate on the substrate is extremely low

The patent number is "CN201410207290" and the name is a Sn-doped CrO 2 Although the thin film and its preparation method were also successfully doped with Sn, which improved its thermal stability, it did not expand the preparation temperature, and the quality of the thin film was slightly reduced, and there was no advantage in magnetic properties.

The currently disclosed methods are all just how to prepare high-purity CrO 2 materials, there is no CrO 2 Specific preparation method of material doped with Ti element to improve its thermal stability

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