A selective infrared radiator

Abstract

The present invention provides a selective infrared radiator. The selective infrared radiator comprises base material silicon, an erbium oxide thick film deposited on the base material and one-dimensional Si / Er2O3 photonic crystal deposited on the erbium oxide thick film. The one-dimensional Si / Er2O3 photonic crystal consists of silicon thin films and erbium oxide thin films deposited on the erbium oxide thick film alternately. According to the selective infrared radiator, an extreme narrow selective infrared radiation spectrum can be required, and thus the photoelectric conversion efficiency of a TPV system is substantially improved.

Description

technical field [0001] The invention belongs to the field of infrared radiation devices, in particular to a selective infrared radiator. Background technique [0002] Selective radiators have important applications in thermophotovoltaic (TPV) systems, and optimizing the infrared thermal radiation performance of selective radiators is of great significance for improving the photoelectric conversion efficiency of the system. Er 2 o 3 , Yb 2 o 3 Rare earth oxides can produce narrow-band infrared characteristic radiation at high temperatures, and are an important class of selective radiator materials. Among them Er 2 o 3 The energy center of photons generated by electronic transitions is 0.805eV (1540nm), which matches the absorption spectrum of GaSb (bandgap 0.72eV) photocells. However, the rare earth oxide block has poor thermal shock resistance and is not suitable for use as a selective radiator alone. In recent years, many researchers have obtained selective radiator...

AI Technical Summary

Problems solved by technology

Since the rare earth oxide film cannot completely shield the gray body radiation from the substrate, the radiation spectrum of the radiator includes part of the gray body radiation spectrum, thereby reducing the selective radiation characteristics of the device.

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