Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of gallium nitride diode and gallium nitride diode

A manufacturing method and technology of gallium nitride, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the performance of gallium nitride power devices, low withstand voltage, etc., to improve withstand voltage, reduce electric field strength, The effect of improving pressure resistance

Active Publication Date: 2019-04-02
PEKING UNIV +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The withstand voltage of gallium nitride power devices in the prior art is lower than the theoretical withstand voltage, which will affect the performance of gallium nitride power devices, so it is necessary to improve the withstand voltage of gallium nitride power devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of gallium nitride diode and gallium nitride diode
  • Manufacturing method of gallium nitride diode and gallium nitride diode
  • Manufacturing method of gallium nitride diode and gallium nitride diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] This embodiment provides a method for fabricating a gallium nitride diode, which is used for fabricating a gallium nitride diode.

[0025] Such as figure 1 Shown is a schematic flow chart of the fabrication method of the gallium nitride diode according to this embodiment. The fabrication method of the gallium nitride diode of this embodiment includes:

[0026] Step 101, forming a dielectric layer on a gallium nitride substrate.

[0027] The dielectric layer may be composed of one material layer, or may be composed of multiple material layers. For example, this step may specifically be:

[0028] forming a passivation layer on the gallium nitride substrate;

[0029] An oxide layer is formed on the passivation layer.

[0030] That is, the dielectric layer in this embodiment includes a passivation layer and an oxide layer formed sequentially from bottom to top. The passivation layer of this embodiment can be Si 3 N 4 layer, the oxide layer may be a PETEOS (Plasma enh...

Embodiment 2

[0041] In this embodiment, a specific supplementary description is given to the manufacturing method of the gallium nitride diode in the above embodiments. Such as Figures 2A to 2F Shown is a schematic cross-sectional structure diagram of each step of the fabrication method of the gallium nitride diode according to the present embodiment.

[0042] Such as Figure 2A As shown, a gallium nitride substrate 201 is produced.

[0043] Specifically, a GaN layer 2012 and an AlGaN barrier layer 2013 may be grown sequentially on the Si substrate 2011 . The specific growth method is consistent with that in the prior art, and will not be repeated here.

[0044] Such as Figure 2B As shown, a dielectric layer 202 is formed on a GaN substrate 201 .

[0045] The gallium nitride substrate 201 includes a Si substrate 2011 , a GaN layer 2012 and an AlGaN layer 2013 which are sequentially formed from bottom to top. The dielectric layer 202 in this embodiment includes a passivation layer 2...

Embodiment 3

[0060] This embodiment provides a gallium nitride diode formed by using the manufacturing method of the above-mentioned embodiments. Such as image 3 Shown is a schematic structural diagram of a gallium nitride diode according to this embodiment.

[0061] The gallium nitride diode of this embodiment includes a gallium nitride substrate 301 , a dielectric layer 302 , a cathode metal 304 , an anode metal 307 , a metal field plate 308 and a metal interconnection layer (not shown in the figure).

[0062] Wherein, the dielectric layer 302 is formed on the gallium nitride substrate 301; the cathode metal 304 is located in the dielectric layer 302 and the cathode metal 304 contacts the gallium nitride substrate 301; the anode metal 307 is located in the dielectric layer 302 and the anode metal 307 contacts the gallium nitride substrate 301 ; the metal field plate 308 is located in the dielectric layer 302 between the cathode metal 304 and the anode metal 307 , and the metal field pl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a manufacturing method of a gallium nitride diode and the gallium nitride diode. The method comprises the steps of forming a dielectric layer on a gallium nitride substrate; forming a cathode metal in the dielectric layer, wherein the cathode metal contacts the gallium nitride substrate; forming an anode metal in the dielectric layer, and forming a metal field plate between the anode metal and cathode metal in the dielectric layer, wherein the anode metal and the metal field plate are in contact with the gallium nitride substrate; and forming a metal interconnection layer on the dielectric layer, wherein the metal interconnection layer is not connected with the metal field plate and is respectively connected with the cathode metal and the anode metal. According to the technical scheme of the invention, the voltage resistance of the gallium nitride diode can be improved.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for manufacturing a gallium nitride diode and the gallium nitride diode. Background technique [0002] Power devices featuring low power consumption and high speed have recently attracted a lot of attention as the need for efficient and complete power conversion circuits and systems has increased. GaN is the third generation wide bandgap semiconductor material, because of its large bandgap width (3.4eV), high electron saturation rate (2e 7 cm / s), high breakdown electric field (1e 10 -3e 10 V / cm), high thermal conductivity, corrosion resistance and radiation resistance, etc., have strong advantages in high pressure, high frequency, high temperature, high power and radiation resistance environmental conditions, and are considered to be researched on short-wave optoelectronic devices and high voltage The best material for high frequency high power devices. Therefore, power de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/36H01L33/00
CPCH01L33/0075H01L33/32H01L33/36
Inventor 刘美华孙辉林信南陈建国
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com