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Gallium nitride semiconductor device and manufacturing method thereof

A gallium nitride and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high electric field density, breakdown, leakage of gallium nitride semiconductor devices, etc., to reduce the electric field intensity, Enhance reliability and improve the effect of device withstand voltage

Active Publication Date: 2017-12-05
SHENZHEN JING XIANG TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, due to the high electric field density, the leakage and breakdown of the GaN semiconductor device will be caused, which will damage the GaN semiconductor device and reduce the reliability of the GaN semiconductor device.

Method used

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  • Gallium nitride semiconductor device and manufacturing method thereof
  • Gallium nitride semiconductor device and manufacturing method thereof
  • Gallium nitride semiconductor device and manufacturing method thereof

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Embodiment Construction

[0037] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] Please refer to Figure 1a As shown, the embodiment of the present invention provides a gallium nitride semiconductor device, which includes from bottom to top: gallium nitride epitaxial layer 510, composite dielectric layer 520, source 520 and drain 532, gate 533, insulating layer 540, field plate metal layer 550 .

[0039] Wherein, ...

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Abstract

The invention relates to the technical field of semiconductor materials, and provides a gallium nitride semiconductor device. The gallium nitride semiconductor device comprises a gallium nitride epitaxial layer, a composite medium layer arranged on the gallium nitride epitaxial layer, a source, a drain and a gate arranged on the composite medium layer, and an insulated layer arranged on the source, the drain, the gate and the composite medium layer, wherein the source, the drain and the gate pass through the composite medium layer respectively and are connected with the gallium nitride epitaxial layer; and the insulated layer is made of silica. According to the gallium nitride semiconductor device, the phenomenon of breakdown of an aluminum gallium nitride layer is not easy to occur, problems of electric leakage and breakdown of the gallium nitride semiconductor device can be avoided, the gallium nitride semiconductor device can be effectively protected, and the reliability of the gallium nitride semiconductor device is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a gallium nitride semiconductor device and a preparation method thereof. Background technique [0002] Gallium nitride has the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, so gallium nitride can be used to make semiconductor materials to obtain gallium nitride semiconductor devices . [0003] In the prior art, a gallium nitride semiconductor device is prepared by forming a silicon nitride layer on the surface of the gallium nitride epitaxial layer, etching a source contact hole and a drain contact hole on the silicon nitride layer, and Deposit metal in the electrode contact hole and drain contact hole to form the source and drain; then etch the silicon nitride layer and the aluminum gallium nitride layer in the gallium nitride epitaxial layer to form a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/417H01L21/28
CPCH01L29/404H01L29/41725H01L21/28H01L29/812H01L29/66871Y02B70/10
Inventor 刘美华林信南刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD
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