GaN semiconductor device and fabrication method thereof

Abstract

The invention relates to the technical field of a semiconductor material, and provides a GaN semiconductor device. The GaN semiconductor device comprises a GaN epitaxial layer, a dielectric layer, a source, a drain, a grid and an insulation layer, wherein the dielectric layer is arranged on the GaN epitaxial layer, the source, the drain and the grid are arranged on the dielectric layer, penetrate through the dielectric layer and are connected with the GaN epitaxial layer, the insulation layer is arranged on the source, the drain, the grid and the dielectric layer, and the material of the insulation layer is silicon dioxide. By the GaN semiconductor device, an aluminum nitride Ga layer is difficult to break down, the problems of electric leakage and breakdown occurring in the GaN semiconductor device are further prevented, the GaN semiconductor device is effectively protected, and the reliability of the GaN semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a gallium nitride semiconductor device and a preparation method thereof. Background technique [0002] Gallium nitride has the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, so gallium nitride can be used to make semiconductor materials to obtain gallium nitride semiconductor devices . [0003] In the prior art, a gallium nitride semiconductor device is prepared by forming a silicon nitride layer on the surface of the gallium nitride epitaxial layer, etching a source contact hole and a drain contact hole on the silicon nitride layer, and Deposit metal in the electrode contact hole and drain contact hole to form the source and drain; then etch the silicon nitride layer and the aluminum gallium nitride layer in the gallium nitride epitaxial layer to form a ...

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Problems solved by technology

[0004] However, in the prior art, due to the high electric field density, the leakage and breakdown of the GaN semiconductor device will be caused, which will damage the GaN semiconductor device and reduce the reliability of the GaN semiconductor device.

Furthermore, after repeated high-voltage tests of GaN power devices, the breakdown voltage of the device will drift. This unstable behavior is related to charge traps, which will cause harm to the reliability of the device and should be suppressed

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