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Gallium nitride epitaxial layer, semiconductor device and preparation method of semiconductor device

A semiconductor and epitaxial layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of extending the depletion region, reducing interface leakage current, and reducing interface states

Pending Publication Date: 2019-12-27
SHENZHEN JING XIANG TECH CO LTD
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Problems solved by technology

[0004] The purpose of the present invention is to provide a gallium nitride epitaxial layer, a semiconductor device, and a method for preparing the semiconductor device. By PVD growing a multi-layer buffer layer and a post-treatment layer, the buffer layer and the buffer layer are solved when the buffer layer is one layer. There is a problem of leakage current between semiconductor substrate interfaces

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  • Gallium nitride epitaxial layer, semiconductor device and preparation method of semiconductor device
  • Gallium nitride epitaxial layer, semiconductor device and preparation method of semiconductor device
  • Gallium nitride epitaxial layer, semiconductor device and preparation method of semiconductor device

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preparation example Construction

[0081] Please also refer to Figure 1-2 As shown, the preparation method of the gallium nitride epitaxial layer in this embodiment at least includes the following steps:

[0082] In step S1100, a buffer layer 1101 is grown on the semiconductor substrate 1100 by an epitaxial growth process, and in step S1101, a barrier layer 1102 is grown on the buffer layer 1101 by an epitaxial growth process.

[0083] see diagram 2-1 As shown, in other embodiments of the present invention, a gallium nitride epitaxial layer may also include: a semiconductor substrate 1200, a first buffer layer 1201, a second buffer layer 1202, a third buffer layer 1203 and a barrier layer 1204 .

[0084] Wherein the first buffer layer 1201 is disposed on the semiconductor substrate 1200 . The second buffer layer 1202 is disposed on the side of the first buffer layer 1201 away from the semiconductor substrate 1200 , and the third buffer layer 1203 is disposed on the side of the second buffer layer 1202 away...

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Abstract

The invention discloses a gallium nitride epitaxial layer, a semiconductor device and a preparation method of the semiconductor device, and relates to the technical field of a semiconductor. The semiconductor device comprises a semiconductor substrate, a first buffer layer, a post-processing layer, a second buffer layer, a barrier layer, a passivation layer, a first anode contact hole, a first anode, a dielectric layer, a second anode contact hole, a second anode, a cathode contact hole, a cathode, a protection layer, an anode opening, an anode conduction metal, a cathode opening, a cathode conduction metal and a field plate layer. The semiconductor device is advantaged in that a problem that leakage current exists between the buffer layer and an interface of the semiconductor substrate when the buffer layer is one is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride epitaxial layer, a semiconductor device and a preparation method of the semiconductor device. Background technique [0002] A semiconductor device is a semiconductor device made using a metal contact semiconductor layer. Compared with semiconductor diodes in the traditional sense, it has the characteristics of extremely short reverse recovery time. Therefore, semiconductor devices are widely used in circuits such as switching power supplies, frequency converters, and drivers. Gallium nitride material is the third generation wide bandgap semiconductor material. Because of its characteristics of large bandgap width, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, it has become The best material for devices and high-voltage high-frequency high-power devices. In summary,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/328
CPCH01L29/0615H01L29/0684H01L29/66212H01L29/872
Inventor 林信南刘美华刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD
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