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A k-band waveguide microstrip transition device

A K-band and waveguide technology, applied in the field of K-band waveguide microstrip transition devices, can solve the problems of complex transition processing of ridge waveguide, unstable active devices, easy self-excited oscillation, etc., and achieves compact structure, good sealing, low cost effect

Active Publication Date: 2020-08-28
36TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the transition processing of the ridge waveguide is complicated, and the assembly tolerance is strict. The contact point between the ridge and the microstrip circuit has a great influence on the performance of the entire transition circuit. Too loose will affect the circuit performance, and too tight will damage the microstrip circuit. Repeatable Poor performance and inconvenient disassembly
It is difficult to suppress all unwanted feedback due to the various modes of the fin line transition to the spine fin line, and the input and output fin lines provide a purely reactive source or load impedance at the cutoff frequency, which puts the active device in an undesired state. Stable region, prone to self-oscillation
The common waveguide microstrip probe and the entire microstrip circuit are fabricated on an integrated circuit, and the sealing of this transition method is poor due to the opening on the side wall of the waveguide to insert the probe.

Method used

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  • A k-band waveguide microstrip transition device
  • A k-band waveguide microstrip transition device
  • A k-band waveguide microstrip transition device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 , figure 2 , image 3 , Figure 4 Shown is Embodiment 1 of the present invention. In this embodiment, a K-band waveguide microstrip transition device includes an upper transition unit 1 and a lower transition unit 2. The upper transition unit 1 and the lower transition unit 2 can be combined together. Both the upper transition unit 1 and the lower transition unit 2 are provided with an input waveguide port, a microstrip line cavity and an output waveguide port. Microstrip Probe Transition Circuit3.

[0031] The transition device is designed as upper and lower parts that can be combined, so that the input waveguide port, microstrip line cavity and output waveguide port can be processed separately in the upper and lower parts, and then combined to form a complete transition device. For example, the upper transition unit 1 and the lower transition unit 2 can be processed by a high-precision numerical control machining center, and then combined.

[00...

Embodiment 2

[0051] The structure of the K-band waveguide microstrip transition device in this embodiment is the same as in Embodiment 1. In this embodiment, specific design reference dimensions are provided for the K-band waveguide microstrip transition device, such as figure 2 , image 3 , Figure 4 As shown, the size of the upper input waveguide port 4, the lower input waveguide port 10, the upper output waveguide port 7 and the lower output waveguide port 14 is 13.7mm*4.32mm*5.334mm; the size of the upper high resistance cavity 5 is 1.6mm *1.4mm*1mm, the chamfering radius is 1mm; the size of the upper microstrip cavity 6 is 30mm*2.9mm*3.1mm; the radius of the fixing bolt 8 is 0.5mm, and the height is 4mm; the size of the upper stop 9 is 1mm wide and 3mm high The size of the lower high resistance cavity 11 is 1.6mm*1.4mm*0.254mm; the size of the lower microstrip line 12 is 30mm*2.9mm*0.254mm; the size of the fixed end 13 of the strip line is 4mm*1.6mm*0.254mm, the chamfer radius 1mm;...

Embodiment 3

[0054] The structure of the K-band waveguide microstrip transition device in this embodiment is the same as in Embodiment 1. In this embodiment, specific design reference dimensions are provided for the K-band waveguide microstrip transition device, such as figure 2 , image 3 , Figure 4 As shown, the size of the upper input waveguide port 4, the lower input waveguide port 10, the upper output waveguide port 7 and the lower output waveguide port 14 is 13.7mm*4.32mm*5.334mm; the size of the upper high resistance cavity 5 is 1.6mm *1.4mm*1mm, the chamfer radius is 1mm; the size of the upper microstrip cavity 6 is 30mm*2.9mm*3.1mm; the radius of the fixing bolt 8 is 0.5mm, the height is 4mm, the size of the upper stop 9 is 1mm wide and 3mm high The size of the lower high resistance cavity 11 is 1.6mm*1.4mm*0.254mm; the size of the lower microstrip line 12 is 30mm*2.9mm*0.254mm; the size of the fixed end 13 of the strip line is 4mm*1.6mm*0.254mm, the chamfer radius 1mm; the ra...

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Abstract

The invention discloses a K-waveband waveguide microstrip transition device, and solves the technical problems that a waveguide microstrip transition device in the prior art is inconvenient to dismount, low in sealing performance and high in electromagnetic wave loss. The K-waveband waveguide microstrip transition device comprises an upper transition unit and a lower transition unit, the upper and lower transition units can be combined, each transition unit is provided with an input waveguide port, a microstrip line cavity and an output waveguide port, the two ends of the microstrip line cavity are communicated with the input waveguide port and the output waveguide port respectively, and the microstrip line cavity is internally provided with a microstrip probe transition circuit. The K-waveband waveguide microstrip transition device has the advantages of low insertion loss, high echo loss, wide frequency band, compact structure, high sealing performance, low cost, small size, easy processing and the like.

Description

technical field [0001] The invention relates to a waveguide microstrip transition device, in particular to a K-band waveguide microstrip transition device. Background technique [0002] With the development of MMIC (millimeter-wave monolithic microwave integrated circuit) device level and MMCM (microwave multi-chip module) assembly technology, the circuit system gradually develops towards full-plane integration, but in the millimeter-wave frequency band due to some important millimeter-wave passive Components such as antennas still use the waveguide transmission method, so the transition technology from planar circuits to waveguides has become one of the key technologies for system realization, and has been extensively studied. The main purpose of the research is to seek a low-cost, low-loss, Easy-to-process wide transition structures. [0003] At present, the transition conversion structures between rectangular waveguide, microstrip and suspended microstrip mainly include ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P5/107
CPCH01P5/107
Inventor 孙超
Owner 36TH RES INST OF CETC