Semiconductor structure and method of making the same

Abstract

The present invention provides a semiconductor structure comprising: a semiconductor device layer comprising a first surface and a second surface, wherein the first surface is located at the front side of the semiconductor device layer, and the second surface is located at the back side of the semiconductor device layer; an insulating layer over the second surface of the semiconductor device; and a through-silicon via (TSV) passing through the insulating layer. A method of fabricating the semiconductor structure is also provided.

Description

technical field [0001] Embodiments of the invention relate to semiconductor structures having silicon-on-insulator structures and methods of manufacturing the same. Background technique [0002] A silicon-on-insulator (SOI) structure may consist of a thick inactive base layer (often but not necessarily made of silicon, which provides mechanical stability), an electrically insulating interlayer (often but not necessarily made of silicon dioxide ( SiO 2 )) and a thin top layer of high-quality monocrystalline silicon (containing the microelectronics patterned, for example, by photolithographic methods). There are many thick and thin film thicknesses in suitable geometries. [0003] SOI substrates, each have been found to be lacking in some respects. In general, certain methods currently proposed will produce thick SOI wafers at relatively low yields and relatively high costs. Other methods that have been proposed so far will produce SOI wafers with device layers that have u...

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Problems solved by technology

[0004] Although various methods have been proposed for fabricating SOI wafers with defect-free device layers (with relatively low variation), these methods generally produce SOI wafers with relatively high yields and favorable costs, but these methods Usually produces thickness variations or contains defects

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