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A kind of temperature compensation surface acoustic wave device and preparation method thereof

A surface acoustic wave device and temperature compensation technology, applied in electrical components, impedance networks, etc., can solve the problems of limited application range, limited piezoelectric substrate, and inability to apply wireless communication, so as to achieve a wide range of applications and improve the effect of temperature compensation. , good inhibitory effect

Active Publication Date: 2021-01-05
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology solves the problem of temperature drift through the piezoelectric substrate itself, and does not require additional temperature compensation materials, but its main problem is that the optional piezoelectric substrates are relatively limited, and these optional piezoelectric substrates have low The coupling coefficient cannot be applied to wireless communication and other fields, and the application range is not wide

Method used

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  • A kind of temperature compensation surface acoustic wave device and preparation method thereof
  • A kind of temperature compensation surface acoustic wave device and preparation method thereof
  • A kind of temperature compensation surface acoustic wave device and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0055] refer to Figure 5 with Image 6 , a method for preparing a temperature-compensated surface acoustic wave device, comprising the following steps:

[0056] depositing a first temperature compensation layer on the substrate;

[0057] forming a piezoelectric film layer on the first temperature compensation layer;

[0058] Form the electrodes required for surface acoustic wave devices on the piezoelectric film layer;

[0059] The second temperature compensation layer is covered on the electrodes required by the surface acoustic wave device.

[0060] Wherein, the electrode required for forming the surface acoustic wave device on the piezoelectric film layer includes two cases: 1) the electrode required for forming the surface acoustic wave device on the upper surface of the piezoelectric film layer; 2) the electrode required for forming the surface acoustic wave device on the piezoelectric film layer The electrodes required to embed surface acoustic wave devices on the u...

no. 1 example

[0078] figure 1 A cross-sectional view of a temperature-compensated surface acoustic wave device of the present invention is shown when the electrodes are located on the upper surface of the piezoelectric thin film layer. figure 1 The surface acoustic wave device structure includes: a substrate 101; a first temperature compensation layer 102 formed above the substrate 101; a piezoelectric thin film layer 103 formed above the first temperature compensation layer 102; a piezoelectric thin film layer 103 formed above the piezoelectric thin film layer 103 A patterned electrode 104; a second temperature compensation layer 105 covering the electrode 104 and the piezoelectric film layer 103.

[0079] figure 2 A cross-sectional view of a temperature-compensated surface acoustic wave device of the present invention is given when electrodes are embedded in the upper surface of the piezoelectric film layer. figure 2The surface acoustic wave device structure comprises: a substrate 101...

no. 2 example

[0082] image 3 A cross-sectional view of a temperature-compensated surface acoustic wave device of the present invention is given when the electrodes are located on the upper surface of the first temperature-compensated layer. image 3 The surface acoustic wave device structure comprises: a substrate 101; a first temperature compensation layer 102 formed above the substrate 101; a patterned electrode 104 formed above the first temperature compensation layer 102; between the electrode 104 and the first temperature compensation layer The piezoelectric film layer 103 covered on 102; the second temperature compensation layer 105 covered on the piezoelectric film layer 103.

[0083] Figure 4 A cross-sectional view of a temperature-compensated surface acoustic wave device of the present invention is given when electrodes are embedded in the upper surface of the first temperature compensation layer. Figure 4 The surface acoustic wave device structure comprises: a substrate 101; ...

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Abstract

The invention discloses a temperature compensation surface acoustic wave device and a manufacturing method thereof. The temperature compensation surface acoustic wave device comprises electrodes, and a substrate, a first temperature compensation layer, a piezoelectric film layer and a second temperature compensation layer which are distributed from bottom to top, wherein the electrodes are positioned above an upper surface of the piezoelectric film layer, embedded into an upper surface of the piezoelectric film layer, positioned above an upper surface of the first temperature compensation layer or embedded into an upper surface of the first temperature compensation layer. In the temperature compensation surface acoustic wave device, the piezoelectric film layer is arranged in the first temperature compensation layer and the second temperature compensation layer, so that the temperature compensation effect of the surface acoustic wave device is improved effectively. The first temperature compensation layer and the second temperature compensation layer have low thermal expansion coefficients, so that a good thermal expansion inhibiting effect is achieved. The first temperature compensation layer and the second temperature compensation layer are used for performing temperature compensation, so that the application range is expanded. The temperature compensation surface acoustic wave device can be widely applied to the fields of communication devices and manufacturing thereof.

Description

technical field [0001] The invention relates to the field of communication devices and its preparation, in particular to a temperature-compensated surface acoustic wave device and its preparation method. Background technique [0002] Surface acoustic wave devices are widely used in wireless communication, television, satellite communication, sensors and other fields. With the gradual depletion of low-frequency spectrum resources and the increase in people's demand for high-speed wireless communication, wireless communication systems are developing towards high-frequency trends, and the electrode sizes of corresponding surface acoustic wave devices are also shrinking. On the one hand, this is beneficial to the miniaturization of wireless communication systems, on the other hand, electrodes with smaller dimensions will have greater parasitic resistance. Under long-time working load, larger parasitic resistance will lead to reliability problems such as temperature rise and fre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/05
CPCH03H3/02H03H9/02834H03H9/058H03H2003/023
Inventor 周长见李斌
Owner SOUTH CHINA UNIV OF TECH