Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Intelligent electric spark detection alarm system based on PN junction chip and preparation method thereof

An alarm system, PN junction technology, applied to fire alarms, circuits, electrical components, etc. that rely on radiation effects, can solve the problems of reducing false alarm rate and high false alarm rate, achieving low false alarm rate, sensitive response, The effect of stable performance

Active Publication Date: 2017-11-17
东营睿港招商服务有限责任公司
View PDF19 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are also applications of ultraviolet detectors on the market, but the detected spectrum covers all ultraviolet light bands below 380nm, which is easily interfered by sunlight and has a high false alarm rate. However, solar-blind ultraviolet detectors can detect sparks in sparks. The sun-blind band ultraviolet light that exists, but does not exist in sunlight, greatly reduces the false alarm rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intelligent electric spark detection alarm system based on PN junction chip and preparation method thereof
  • Intelligent electric spark detection alarm system based on PN junction chip and preparation method thereof
  • Intelligent electric spark detection alarm system based on PN junction chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The preparation method of the intelligent electric spark detection and alarm system based on the PN junction chip has the following steps:

[0035] The p-type Pr oxide / gallium oxide PN junction was formed by using a mask plate and radio frequency magnetron sputtering technology 2 o 3thin film and n-type β-Ga 2 o 3 Ti / Au thin films are deposited on the single crystal substrate as measuring electrodes; the praseodymium oxide / gallium oxide PN junction chip with electrodes, GSM module and buzzer are connected to the ultraviolet photoelectric detection circuit to form an intelligent electric spark detection alarm system.

[0036] Specifically, the preparation method of the praseodymium oxide / gallium oxide PN junction chip includes the following steps:

[0037] Step 1: the n-type β-Ga 2 o 3 The substrate is put into V(HF):V(H 2 o 2 )=1:5 solution to remove the natural oxide layer, then ultrasonically clean with acetone, ethanol and deionized water respectively, and va...

Embodiment 2

[0042] The preparation method of the intelligent electric spark detection and alarm system based on the PN junction chip has the following steps:

[0043] The p-type Pr oxide / gallium oxide PN junction was formed by using a mask plate and radio frequency magnetron sputtering technology 2 o 3 thin film and n-type β-Ga 2 o 3 Ti / Au thin films are deposited on the single crystal substrate as measuring electrodes; the praseodymium oxide / gallium oxide PN junction chip with electrodes, GSM module and buzzer are connected to the ultraviolet photoelectric detection circuit to form an intelligent electric spark detection alarm system.

[0044] Specifically, the preparation method of the praseodymium oxide / gallium oxide PN junction chip includes the following steps:

[0045] Step 1: the n-type β-Ga 2 o 3 The substrate is put into V(HF):V(H 2 o 2 )=1:5 solution to remove the natural oxide layer, then ultrasonically clean with acetone, ethanol and deionized water respectively, and v...

Embodiment 3

[0050] The preparation method of the intelligent electric spark detection and alarm system based on the PN junction chip has the following steps:

[0051] The p-type Pr oxide / gallium oxide PN junction was formed by using a mask plate and radio frequency magnetron sputtering technology 2 o 3 thin film and n-type β-Ga 2 o 3 Ti / Au thin films are deposited on the single crystal substrate as measuring electrodes; the praseodymium oxide / gallium oxide PN junction chip with electrodes, GSM module and buzzer are connected to the ultraviolet photoelectric detection circuit to form an intelligent electric spark detection alarm system.

[0052] Specifically, the preparation method of the praseodymium oxide / gallium oxide PN junction chip includes the following steps:

[0053] Step 1: the n-type β-Ga 2 o 3 The substrate is put into V(HF):V(H 2 o 2 )=1:5 solution to remove the natural oxide layer, then ultrasonically clean with acetone, ethanol and deionized water respectively, and v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an intelligent electric spark detection alarm system based on a PN junction chip and a preparation method thereof. The system comprises a praseodymium oxide / gallium oxide PN junction chip, an ultraviolet photoelectric detection peripheral circuit, a GSM module and a buzzer, the praseodymium oxide / gallium oxide PN junction chip is connected with the ultraviolet photoelectric detection peripheral circuit, the GSM module and the buzzer are connected to the ultraviolet photoelectric detection peripheral circuit in parallel, the praseodymium oxide / gallium oxide PN junction chip comprises an n-type gallium oxide monocrystalline substrate, a p-type praseodymium oxide film arranged on the n-type gallium oxide monocrystalline substrate, and Ti / Au film electrodes, and the area of the p-type praseodymium oxide film is half of the area of the n-type gallium oxide monocrystalline substrate. According to the praseodymium oxide / gallium oxide PN junction chip, the performance is stable, the responsivity and the sensitivity are high, and the dark current is low; and according to the intelligent electric spark detection alarm system, remote alarm can be realized, the system can be applied to remote electrical fire alarm and detection of high-voltage line coronas and spectrums with specific wavelengths, and the application prospect is wide.

Description

technical field [0001] The invention relates to an electric spark detection and alarm system, in particular to an intelligent electric spark detection and alarm system based on a PN junction chip and a preparation method thereof. technical background [0002] Most of the fire detectors on the market are based on the mechanism of temperature sensing, smoke particles, and infrared light detection. These devices often work when a fire has already occurred with open flames or smoke, and the alarm at this time is relatively late. According to statistics, 80% of warehouse fires are caused by electric sparks caused by aging discharge of electrical equipment. This process will emit deep ultraviolet light (200-280nm) in the sun-blind band, which can be detected. Therefore, research and development of an intelligent fire alarm that can accurately and effectively detect electric spark signals and prevent them from "burning" is urgently needed in the current security field. [0003] A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G08B17/12H01L31/032H01L31/109
CPCG08B17/12H01L31/032H01L31/109
Inventor 王旭兰
Owner 东营睿港招商服务有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com