Through-silicon via (tsv) crack sensors for detecting tsv cracks in three-dimensional (3d) integrated circuits (ics) (3dics), and related methods and systems

A technology of integrated circuits and sensors, which is applied in the field of detection of surface cracks on silicon substrates, which can solve the problems of discarding systems, reducing customer satisfaction, and increasing costs.

Inactive Publication Date: 2017-11-28
QUALCOMM INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If a TSV crack occurs after the corresponding 3DIC is embedded in the system, the TSV crack can cause the entire system to be discarded, increasing cost and reducing customer satisfaction

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  • Through-silicon via (tsv) crack sensors for detecting tsv cracks in three-dimensional (3d) integrated circuits (ics) (3dics), and related methods and systems
  • Through-silicon via (tsv) crack sensors for detecting tsv cracks in three-dimensional (3d) integrated circuits (ics) (3dics), and related methods and systems
  • Through-silicon via (tsv) crack sensors for detecting tsv cracks in three-dimensional (3d) integrated circuits (ics) (3dics), and related methods and systems

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Embodiment Construction

[0030] Referring now to the figures, several exemplary aspects of the invention are described. The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects.

[0031] Aspects disclosed in the detailed description include a TSV crack sensor for detecting through-silicon via (TSV) cracks in a three-dimensional (3D) integrated circuit (IC) (3DIC). Related methods and systems are also disclosed. In order to detect cracks in TSVs in 3DICs, a TSV crack sensor is provided in 3DICs, which can be caused by the mismatch of coefficient of thermal expansion (CTE) between the materials used to generate TSVs and the corresponding substrate. Bottom cracks. The TSV crack sensors are arranged around the corresponding TSVs in the 3DIC. In one aspect, a TSV crack sensor consists of a doped ring disposed around a corresponding TSV. Sp...

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Abstract

Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems are disclosed. In one aspect, a TSV crack sensor circuit is provided in which doped rings for a plurality of TSVs are interconnected in parallel such that all interconnected TSV doped rings may be tested at the same time by providing a single current into the contacts of the interconnected doped rings. In another aspect, a TSV crack sensor circuit is provided including one or more redundant TSVs. Each doped ring for a corresponding TSV is tested independently, and a defective TSV may be replaced with a spare TSV whose doped ring is not detected to be cracked. This circuit allows for correction of a compromised 3DIC by replacing possibly compromised TSVs with spare TSVs.

Description

[0001] priority application [0002] This application claims to have been filed on March 5, 2015 and is titled "TSV Crack Sensor and Related Methods and Systems for Detecting Through-Silicon Via (TSV) Cracks in Three-Dimensional (3D) Integrated Circuits (ICs) (3DICs) (THROUGH- SILICONVIA (TSV) CRACK SENSORS FOR DETECTING TSV CRACKS IN THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS (ICs) (3DICs), AND RELATED METHODS AND SYSTEMS)" U.S. Patent Application No. 14 / 639,511, said application The case is incorporated herein by reference in its entirety. technical field [0003] The technique of the present invention relates generally to through-silicon vias (TSVs) for three-dimensional (3D) integrated circuits (ICs) (3DICs), and more specifically to the detection of cracks in the surface of silicon substrates in such three-dimensional integrated circuits. Background technique [0004] Computing devices have become ubiquitous in society. The growth in the presence of such computing de...

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G01R19/165G01R31/28G01R31/3185H01L21/66H01L23/48H01L23/58H01L23/64H01L27/06
CPCG01R19/16533G01R31/2851G01R31/2853G01R31/318513H01L22/14H01L22/34H01L23/481H01L23/585H01L23/647H01L27/0688
Inventor李圣奎瑞提柏·瑞多席克杜杨
OwnerQUALCOMM INC