Lining, reaction cavity chamber and semiconductor processing equipment

Abstract

The invention provides a lining, a reaction chamber and semiconductor processing equipment, which are used to protect the side wall and the bottom chamber wall of the reaction chamber from being etched by plasma, and the bottom chamber wall is grounded. The lining includes a lining body, a ring-shaped constraining layer and a ring-shaped grounding layer, wherein the ring-shaped constraining layer is arranged around the inner side wall of the lining body, and is lower than and close to the processing position of the workpiece to be processed, so as to The plasma is confined on the plane where the process position is located; the annular grounding layer is arranged around the inner side wall of the liner body and is located at the lower end of the inner side wall, and the lower surface of the annular grounding layer is in contact with the upper surface of the bottom chamber wall Combined to achieve electrical conduction and heat transfer between the two. The inner lining provided by the invention can not only avoid the waste of plasma energy, but also ensure the grounding performance and heat conduction performance of the inner lining, thereby ensuring the process result.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an inner lining, a reaction chamber and semiconductor processing equipment. Background technique [0002] In the process of semiconductor processing and etching process, the optimal design of the internal structure of the chamber plays a decisive role in the process performance of the equipment itself and the etching result. At present, the method of adding a liner inside the chamber is usually used to confine the plasma, protect the inner side wall and the bottom chamber wall from being etched by the plasma, and also facilitate the daily maintenance of the chamber. [0003] In an existing reaction chamber, a liner is arranged around the reaction chamber, and a chuck for carrying wafers is arranged inside the reaction chamber and inside the liner. Wherein, the lining includes an annular body, which is arranged around the inside of the side wall of the reactio...

AI Technical Summary

Problems solved by technology

[0006] However, since the above-mentioned inner lining is only in contact with the side wall of the reaction chamber through the flange arranged on the upper end of the annular body to realize the grounding and heat conduction of the inner lining, the contact area between the flange and the side wall is limited, and the inner lining cannot be guaranteed. Excellent grounding performance and thermal conductivity

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