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A high-efficiency deposition CVD device

A high-efficiency, air-intake device technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of waste and not conducive to the effective use of reaction gas

Inactive Publication Date: 2019-10-15
黎子兰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can reduce the generation of vortex airflow, etc., but this effect only exists in a certain process interval
At the same time, this structure usually requires a long distance between the gas inlet and the substrate, which is not conducive to the effective use of the reaction gas, resulting in waste

Method used

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  • A high-efficiency deposition CVD device
  • A high-efficiency deposition CVD device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] exist figure 1 In the shown embodiment, a kind of efficient deposition CVD apparatus comprises reaction chamber 2, and the interior of reaction chamber 2 is reaction chamber 4, and reaction chamber 2 comprises air inlet device 7, substrate support structure and heater 5, in reaction chamber An air inlet 1 and an air outlet 3 are respectively provided above and below 2, and an air inlet device 7, a substrate support structure and a heater 5 are installed in the reaction chamber 4, and the air inlet device 7, the substrate support structure and the heater 5 are arranged in parallel from top to bottom in the reaction chamber 4, the substrate is placed horizontally on the support surface of the substrate support structure, and several diversion grooves 8 are set on the air inlet device 7, of which more than 50% of the diversion grooves 8 Viewed from a three-dimensional perspective with the gas inlet 1 as the origin, the centerline direction of the center line has a vertical...

Embodiment 2

[0015] see figure 2 The structure of this embodiment differs from that of Embodiment 1 only in that the direction of the centerline of more than 50% of the diversion groove 8 is viewed from a three-dimensional perspective: it has a vertically downward component and a component in the direction of rotation of the substrate tray. The component of the center of the tray pointing to the outer edge of the substrate tray is zero; the substrate support structure is composed of the substrate tray 6 and the rotation shaft 9 supporting the substrate tray 6, and the rotation shaft 9 is fixedly connected to the lower middle of the substrate tray 6, And pass through the reaction chamber 2 and connect with the driving mechanism. The rotary shaft 9 supports the substrate tray 6 and rotates at a speed of 60 to 3000 rpm. Wherein, the rotating shaft 9 can be located at the central part of the heater 5, or can be a hollow shaft structure, and the entire heater 5 is arranged in the hollow shaft...

Embodiment 3

[0017] The third embodiment has the same basic structure as the second embodiment. The only difference is that the direction of the centerline of more than 50% of the diversion grooves 8 is viewed from a three-dimensional perspective: at the same time, it has a vertically downward component, a component pointing from the center of the substrate tray to the outer edge of the substrate tray, and the rotation direction of the substrate tray This can effectively reduce the interference between the incident gas and the outgoing gas due to different flow directions, making the overall flow field smoother and reducing the occurrence of gas phase reactions.

[0018] The present invention mainly makes a major improvement on the gas field layout of CVD, mainly by improving the structure direction of the diversion groove 8, usually the diversion groove 8 of various shapes and directions can be set on the air intake device 7, but as long as one of them More than 50% of the direction of th...

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Abstract

Provided is an efficient chemical vapor deposition (CVD) device. A gas inlet device, a substrate supporting structure and a heater are distributed in parallel in a reaction cavity from top to bottom. A substrate is horizontally arranged on a supporting face of the substrate supporting structure, the gas inlet device is provided with a plurality of flow guiding grooves, and when observed from the three-dimensional angle with a gas inlet as the original point, the orientations of central lines of more than 50% of the flow guiding grooves have perpendicularly-downward components and components pointing to the outer edge direction of a substrate tray from the center of the substrate tray, and meanwhile, the component in the rotating direction of the substrate tray is zero; or, the orientations of the central lines of more than 50% of the flow guiding grooves have perpendicularly-downward components and components in the rotating direction of the substrate tray, and meanwhile, the component pointing to the outer edge direction of the substrate tray from the center of the substrate tray is zero; or the orientations of the central lines of more than 50% of the flow guiding grooves have perpendicularly-downward components, components pointing to the outer edge direction of the substrate tray from the center of the substrate tray and components in the rotating direction of the substrate tray. The efficient CVD device is high in efficiency, not prone to generating airflow such as vortexes, and capable of effectively restraining the gas phase reaction and greatly reducing generation of defective by-products such as particles.

Description

technical field [0001] The invention relates to a chemical vapor deposition (CVD) equipment, in particular to a high-efficiency deposition CVD device. Background technique [0002] A CVD device is a device used for thin film growth. In the reaction chamber of a typical CVD device, it usually contains a precursor (gas) shower, a substrate, a heater, and a gas outlet. The gas field layout design of a CVD device has a critical impact on the performance of the CVD device. [0003] In an existing CVD device, the gas is horizontally introduced into the reaction chamber, flows parallel to the surface of the substrate, and is sucked out through the gas outlet after passing through the surface of the substrate. In such equipment the substrate is often rotated to help achieve a more uniform deposit thickness. This aerodynamic layout has a relatively long distance from the air inlet to the air outlet, and it is easy to generate some particulate matter due to the gas phase reaction, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/458
Inventor 黎子兰陈景升黎静田青林文龙
Owner 黎子兰