Unlock instant, AI-driven research and patent intelligence for your innovation.

Light-emitting diode and method of making the same

A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing light efficiency, current crowding, and saturation current drop, and achieves improved luminous efficiency, uniform current distribution, and uniform distribution. Effect

Active Publication Date: 2019-03-15
XIAMEN CHANGELIGHT CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current blue-green light-emitting diodes have the problem of current crowding, especially for high-power light-emitting diodes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0060] As mentioned in the background art, blue-green light-emitting diodes in the prior art have the problem of current crowding. The inventor found that the reason for this problem is that the structure of blue-green light-emitting diodes is mostly epitaxial multilayer nitrogen on a sapphire substrate. The structure of the gallium-based material, and the sapphire substrate is a non-conductive material, so that the two electrodes of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

The invention discloses an LED and a manufacturing method of LEDs. The LED comprises a substrate, successively arranged buffer layers, a plurality of carbon nanotubes, and unintentional doped layers and first doped layers formed among a plurality of the carbon nanotubes, wherein the heights of the carbon nanotubes are greater than the thicknesses of the unintentional doped layers, and smaller than the sum of the thicknesses of the unintentional doped layers and the first doped layers, each first doped layer comprises an upper surface, a lower surface and a first platform, the first platform is lower than the upper surface, and higher than the lower surface, and cross sections of a plurality of the carbon nanotubes and partial cross sections of the first doped layers are exposed on the first platform; the LED further comprises a first electrode directly contacted with the first platform, active layers, current blocking layers, second doped layers and second electrodes successively arranged on the first doped layers and isolating layers for electrically isolating the structures. The LED disclosed by the invention makes use of the superconducting effect of the carbon nanotubes to uniformly distribute currents in bulk materials containing the carbon nanotubes, thereby solving the problem of current crowding of traditional LEDs.

Description

Technical field [0001] The present invention relates to a light-emitting diode, and more specifically, to a light-emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED) is an optoelectronic semiconductor element that can convert current into a specific wavelength range. It has the advantages of low power consumption, small size, high brightness, easy matching with integrated circuits, and high reliability, and is widely used as a light source. [0003] Current blue-green light-emitting diodes have the problem of current crowding, especially for high-power light-emitting diodes, this problem is particularly obvious, which to a large extent leads to a significant decrease in saturation current, thereby reducing light efficiency. Based on this, there is an urgent need to develop a light emitting diode that can avoid current congestion. Summary of the invention [0004] In view of this, the present invention provides a light-emittin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/0066H01L33/0075H01L33/14
Inventor 林志伟陈凯轩吕孟奇卓祥景汪洋
Owner XIAMEN CHANGELIGHT CO LTD