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An integrated monocrystalline silicon growth furnace electrode lifting mechanism

A technology of electrode lifting and single crystal silicon, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unbalanced thermal field, affecting the quality of crystal growth and production crystal rods, etc., and achieve thermal field temperature balance, Facilitate crystal growth and reduce cost

Active Publication Date: 2020-02-04
SHANGHAI HANHONG PRECISION MACHINERY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During crystal growth, the position of the crucible will gradually rise, and the position of the side heater will change, resulting in an unbalanced thermal field, affecting the quality of crystal growth and ingot production

Method used

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  • An integrated monocrystalline silicon growth furnace electrode lifting mechanism
  • An integrated monocrystalline silicon growth furnace electrode lifting mechanism

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Embodiment 1

[0029] like figure 1 , 2 The one-piece monocrystalline silicon growth furnace electrode lifting mechanism shown includes four guide pillars 37 fixedly installed between the single crystal furnace chassis 101 and the frame 202, and four guide pillars arranged on the four guide pillars and can move along the guide The base plate 35 that the column moves up and down, the four guide columns 37 are distributed at the four corners of the base plate 35 in four diagonal directions of the left front side, the right front side, the right rear side, and the left rear side. Linear bearings 36 are respectively installed on the four corners of 35, and each linear bearing 36 is slidably connected with respective corresponding guide posts 37;

[0030] The first main electrode 303 and the second main electrode 404 are respectively provided on the left front side and the right rear side of the substrate 35, and the first auxiliary support 505 and the second auxiliary support are respectively p...

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Abstract

The invention relates to the technical field of single crystal furnace equipment, specifically to an integrated monocrystalline silicon growth furnace electrode elevating mechanism. The integrated monocrystalline silicon growth furnace electrode elevating mechanism comprises four guide posts fixedly installed between a single crystal furnace chassis and a rack and a substrate which is arranged onthe four guide posts and can move up and down along the guide posts. The invention has the following beneficial effects: a heater at the lateral side of a thermal field can change with the position change of a crucible and temperature of the thermal field is more balanced, which is beneficial to growth of crystals and helps raise quality of crystal bars; a first main electrode and a second main electrode can simultaneously lift, and the lateral heater connected to the two main electrodes can lift; with auxiliary supports which are connected to the lateral heater, the lateral heater lifts stably; the main electrodes and the auxiliary supports are all fixed on the same substrate so as to realize synchronous lifting; and through a servo motor for simultaneously driving the two main electrodesand the two auxiliary supports to lift, cost of the whole monocrystalline silicon growth furnace electrode elevating mechanism is reduced.

Description

technical field [0001] The invention relates to the technical field of single crystal furnace equipment, in particular to an integrated single crystal silicon growth furnace electrode lifting mechanism. Background technique [0002] The main electrodes of the existing mainstream monocrystalline silicon growth furnaces are all fixed on the furnace chassis and cannot be raised or lowered. The side heaters connected to the main electrodes are therefore fixed. During crystal growth, the position of the crucible will gradually rise, and the position of the side heater will change, resulting in an unbalanced thermal field, which will affect the quality of crystal growth and ingot production. Contents of the invention [0003] The purpose of the present invention is to overcome the shortcomings of the prior art, and provide a single crystal silicon growth furnace with a main electrode that can be lifted. [0004] In order to achieve the above purpose, the present invention prov...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B35/00C30B29/06
Inventor 刘海贺贤汉郡司拓
Owner SHANGHAI HANHONG PRECISION MACHINERY
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