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Semiconductor Devices and Methods for Forming a Semiconductor Device

A technology of semiconductors and devices, applied in the field of protection structures, can solve problems such as interference work

Active Publication Date: 2018-01-05
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To achieve high integration density, different circuits included in an integrated circuit are often located close to each other and thus may interfere with each other's work

Method used

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  • Semiconductor Devices and Methods for Forming a Semiconductor Device
  • Semiconductor Devices and Methods for Forming a Semiconductor Device
  • Semiconductor Devices and Methods for Forming a Semiconductor Device

Examples

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Embodiment Construction

[0016] Various example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are shown. In the drawings, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0017] Therefore, while the exemplary embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. plan. Throughout the description of the figures, the same reference numerals refer to the same or similar elements.

[0018] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be dire...

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Abstract

A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backsidesurface of the substrate to at least a part of the front side surface in contact with the wiring structure. An edge termination doping region laterally surrounds the first and second active areas. The edge termination doping region and the first doping region have a first conductivity type, and the common doping region has a second conductivity type. A resistive connection between the edge termination doping region and the first doping region is present at least during reverse operating conditions of the semiconductor device.

Description

technical field [0001] Embodiments relate to protective structures in semiconductor devices, and in particular, to semiconductor devices and methods for forming semiconductor devices. Background technique [0002] The integration density of circuit elements in semiconductor devices and integrated circuits has grown rapidly over the past few decades, and the end of this trend is neither in sight nor expected in the future. More and more functions including different kinds of circuits such as logic circuits, power devices, analog circuits, signal processing circuits, etc. are integrated onto a single chip. In order to achieve high integration density, different circuits included in an integrated circuit are often located close to each other and thus may interfere with each other's operation. A guard structure may be employed to shield different circuits or different circuit components from each other, thereby providing more reliable operation of the semiconductor device. Co...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739H01L29/78
CPCH01L21/761H01L29/7395H01L29/8611H01L29/66333H01L21/823481H01L29/0619H01L29/1095H01L29/7802H01L21/263H01L21/823487H01L27/088H01L29/36H01L29/66712H01L29/7811
Inventor 阿德里安·芬内拉杜·欧根·卡济米罗维奇迪特马尔·科茨托马斯·奥斯特曼
Owner INFINEON TECH AG