Enhancement mode transistor and manufacturing method thereof

Abstract

The present invention provides an enhancement mode transistor, which includes a substrate, a back barrier layer, a channel layer and a hetero layer formed on the substrate in sequence, and a high mobility thin film layer is arranged on the hetero layer, so that the The high mobility thin film layer defines a source region, a drain region and a gate region, the source region and the drain region are respectively connected to the source electrode and the drain electrode, and the gate region is etched to form an exposed The window of the heterogeneous layer; an insulating medium layer and a gate electrode are sequentially formed on the high-mobility thin film layer, and the projection of the gate electrode on the high-mobility thin film layer at least completely covers the window. The enhancement mode transistor and its manufacturing method provided by the present invention provide a solution for realizing the enhancement mode high mobility transistor, which improves the electron mobility and operating frequency of the entire enhancement mode transistor, and reduces the conduction of the entire enhancement mode transistor. loss and switching loss, simplify the manufacturing process and the structure of the transistor, and reduce the manufacturing cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an enhancement transistor and a manufacturing method thereof. Background technique [0002] In the past fifty years, power devices have developed from the first generation of Si semiconductor materials to the second generation of GaAs semiconductor materials, and then to the current third generation of SiC / GaN semiconductor materials. Although the first generation of Si semiconductor power devices has achieved remarkable results, its performance is currently close to the theoretical limit of the material. In addition, with the increasing requirements for frequency and power, the second generation of GaAs semiconductor materials due to their narrow bandgap , low breakdown electric field and other factors, resulting in GaAs power devices can not meet the existing technology development. As an important third-generation wide-bandgap semiconductor material, galliu...

AI Technical Summary

Problems solved by technology

For graphene or other high-mobility thin-film material transistors, since single-layer graphene has no band gap, it cannot be turned off. Even if the graphene and other materials under the gate are etched away, the inversion principle similar to Si-based MOSFETs is adopted. To achieve turn-off, it is also impossible to realize high-mobility transistors due to the low mobility under the gate, and cannot take advantage of the high mobility of materials such as graphene.

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