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Heterojunction Bipolar Transistor

A heterojunction bipolar and transistor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increased electric field strength and reduced reverse withstand voltage between base and emitter, achieving Effect of suppressing decrease in current amplification factor

Active Publication Date: 2021-12-28
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] Third, if there is an increase in the doping concentration N d , when a reverse voltage is applied between the base and the emitter, the electric field intensity on the side of the emitter layer near the base layer becomes larger, and the reverse withstand voltage between the base and the emitter decreases.

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Embodiment Construction

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same element, and the overlapping description is abbreviate|omitted.

[0040] First, refer to figure 1 as well as figure 2 , the HBT according to the first embodiment of the present invention will be described. here, figure 1 is a cross-sectional view of HBT 100 according to the first embodiment of the present invention, figure 2 It is a graph showing the relationship between each layer and the doping concentration in HBT 100 according to the first embodiment of the present invention.

[0041] Such as figure 1 As shown, the HBT 100 is formed on the semiconductor substrate 1 . The semiconductor substrate 1 is made of, for example, GaAs, and has a width direction parallel to the Y axis, a depth direction parallel to the X axis, and a thickness direction parallel to the Z axis (see figure 1). ...

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Abstract

The present invention provides an HBT that suppresses a decrease in current amplification factor and a decrease in a base-emitter reverse withstand voltage and achieves high efficiency. In a heterojunction bipolar transistor, a collector layer, a base layer, an emitter layer, and a semiconductor layer are sequentially stacked, and the emitter layer includes a first region on which the semiconductor layer is stacked on the upper surface and a first region adjacent to the first region and on the upper surface. In the second region where the surface is exposed, the doping concentration in the first region and the second region of the emitter layer is higher near the upper surface than near the interface with the base layer.

Description

technical field [0001] The present invention relates to heterojunction bipolar transistors. Background technique [0002] In mobile communication devices such as mobile phones, heterojunction bipolar transistors (HBT: Heterojunction Bipolar Transistor) are widely used in order to amplify the power of radio frequency (RF: Radio Frequency) signals transmitted to base stations. For example, Patent Document 1 discloses an HBT in which a collector layer, a base layer, and an emitter layer are sequentially stacked, and the doping concentration of the emitter layer is uniformly distributed. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2002-76015 [0004] Improvement of power added efficiency is required in HBT. As one of the methods for improving the efficiency of HBT, it has been found that increasing the doping concentration of the emitter layer of HBT is effective in increasing the base-emitter capacitance according to the results of research by the inventors. . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/737H01L29/08H01L29/36H01L21/331
CPCH01L29/7371H01L29/158H01L29/0817H01L29/66318H01L29/66242
Inventor 梅本康成小屋茂树吉田茂大部功
Owner MURATA MFG CO LTD
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