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Heterojunction bipolar transistor

A heterojunction bipolar and transistor technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. The effect of suppressing the reduction of the current amplification ratio and improving the efficiency

Pending Publication Date: 2021-12-07
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0020] Third, if there is an increase in the doping concentration N d , when a reverse voltage is applied between the base and the emitter, the electric field intensity on the side of the emitter layer near the base layer becomes larger, and the reverse withstand voltage between the base and the emitter decreases.

Method used

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Embodiment Construction

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same element, and the overlapping description is abbreviate|omitted.

[0041] First, refer to figure 1 as well as figure 2 , the HBT according to the first embodiment of the present invention will be described. here, figure 1 is a cross-sectional view of HBT 100 according to the first embodiment of the present invention, figure 2 It is a graph showing the relationship between each layer and the doping concentration in HBT 100 according to the first embodiment of the present invention.

[0042] Such asfigure 1 As shown, the HBT 100 is formed on the semiconductor substrate 1 . The semiconductor substrate 1 is made of, for example, GaAs, and has a width direction parallel to the Y axis, a depth direction parallel to the X axis, and a thickness direction parallel to the Z axis (see figure 1 ). T...

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Abstract

The invention provides an HBT capable of suppressing a decrease in current amplification factor and a decrease in reverse withstand voltage between a base and an emitter, and achieving high efficiency. In the heterojunction bipolar transistor, a collector layer, a base layer, an emitter layer and a semiconductor layer are stacked in sequence; the emitter layer includes a first region in which a semiconductor layer is laminated on an upper surface, and a second region provided adjacent to the first region and having an upper surface exposed. The doping concentration in the first region and the second region of the emitter layer is higher in the vicinity of the upper surface than in the vicinity of the interface with the base layer.

Description

[0001] This application is a divisional application of the invention patent application with the application number 201710089447.4, the application date is February 20, 2017, the applicant is Murata Manufacturing Co., Ltd., and the invention name is "Heterojunction Bipolar Transistor". technical field [0002] The present invention relates to heterojunction bipolar transistors. Background technique [0003] In mobile communication devices such as mobile phones, heterojunction bipolar transistors (HBT: Heterojunction Bipolar Transistor) are widely used in order to amplify the power of radio frequency (RF: Radio Frequency) signals transmitted to base stations. For example, Patent Document 1 discloses an HBT in which a collector layer, a base layer, and an emitter layer are sequentially stacked, and the doping concentration of the emitter layer is uniformly distributed. [0004] Patent Document 1: Japanese Patent Laid-Open No. 2002-76015 [0005] Improvement of power added eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/737H01L29/15H01L29/08H01L21/331
CPCH01L29/7371H01L29/158H01L29/0817H01L29/66318H01L29/66242H01L29/20
Inventor 梅本康成小屋茂树吉田茂大部功
Owner MURATA MFG CO LTD
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