based on sio x Optically read synapse device structure and preparation method thereof
A technology of synapse and device structure, applied in nanotechnology, electrical components, nanotechnology, etc. for materials and surface science, can solve the problem of not using photon medium to read the weight of synapse, and reach the size of the device zoom out effect
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[0029] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0030] A SiO-based x Optically readable synaptic device structures, including "metal / SiO x / Metal" surface plasmon waveguide and embedded "top electrode / dual resistive variable layer / bottom electrode" memristor;
[0031] The surface plasmon waveguide has a vertical three-layer structure of "second metal layer 3 / dielectric layer 2 / first metal layer 1" from top to bottom;
[0032] The memristor has a vertical four-layer structure of "...
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