Multi-value adiabatic phase inverter based on transmission gate structure

A technology of inverter and transmission gate, which is applied in the direction of reducing the power of field effect transistors, improving the reliability of field effect transistors, coupling/interface of logic circuits using field effect transistors, etc. Problems such as high consumption and assignment errors

Active Publication Date: 2018-02-13
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the multi-valued adiabatic inverter has the following problems: 1. In the assignment stage, the power clock signal Φ 1 When assigning a value to the output terminal out through two-stage NMOS transistors (M7 and M8), or assigning a value to the inverting output terminal outb through two-stage NMOS transistors (M9 and M10), due to the inevitable threshold loss of the two-stage NMOS transistors, it is easy to The signal deviation of the outpu

Method used

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  • Multi-value adiabatic phase inverter based on transmission gate structure
  • Multi-value adiabatic phase inverter based on transmission gate structure
  • Multi-value adiabatic phase inverter based on transmission gate structure

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Example Embodiment

[0026] Example 1: Figure 3(a), Figure 3(b) and Figure 5 As shown, a multi-value adiabatic inverter based on a transmission gate structure includes a transmission gate control circuit and a multi-value adiabatic logic circuit;

[0027] The transmission gate control circuit includes a first PMOS tube P1, a second PMOS tube P1, a third PMOS tube P3, a fourth PMOS tube P4, a first NMOS tube N1, a second NMOS tube N2, a third NMOS tube N3, and a fourth NMOS tube. The tube N4 and the two-input AND gate AND1, the two-input AND gate AND1 has a first input terminal, a second input terminal and an output terminal; the source of the first PMOS tube P1 is connected to the source of the second PMOS tube P1 and its connection terminal Is the power clock signal input terminal of the transmission gate control circuit, the source of the third PMOS tube P3 and the source of the fourth PMOS tube P4 are connected, and the connection terminal is the clock control clock signal input terminal of the tr...

Example Embodiment

[0032] The second embodiment: this embodiment is basically the same as the first embodiment, and the difference is only as follows: Image 6 As shown, in this embodiment, the first binary inverter NOT1 includes an eleventh PMOS tube P11 and an eleventh NMOS tube N11. The source of the eleventh PMOS tube P11 is connected to the power supply VDD, and the eleventh PMOS tube The gate of P11 is connected to the gate of the eleventh NMOS transistor N11 and its connection terminal is the input terminal of the first binary inverter NOT1, the drain of the eleventh PMOS transistor P11 and the drain of the eleventh NMOS transistor N11 The pole is connected and its connection terminal is the output terminal of the first inverter, the source of the eleventh NMOS transistor N11 is grounded, the circuit structure of the second binary inverter NOT2 and the circuit structure of the first binary inverter NOT1 Similarly, the circuit structure of the third binary inverter NOT3 is the same as that o...

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Abstract

The invention discloses a multi-value adiabatic phase inverter based on a transmission gate structure. The multi-value adiabatic phase inverter comprises a transmission gate control circuit and a multi-value adiabatic logic circuit. The transmission gate control circuit comprises a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor and a two-input AND gate. The two-input AND gate is equipped with a first input end, a second input end and an output end. The multi-value adiabatic logic circuit comprises a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor and three binary phase inverters. The multi-value adiabatic phase inverter has the advantages that no threshold loss exists, an output data error is avoided, the reliability is relatively high, and the power consumption is relatively low.

Description

technical field [0001] The invention relates to an inverter, in particular to a multi-valued adiabatic inverter based on a transmission gate structure. Background technique [0002] Most of the traditional CMOS integrated circuits are powered by DC power supply, and the energy is always consumed at one time from the power supply → capacitor → ground. Although the power consumption of CMOS integrated circuits can be reduced by reducing power supply voltage and node capacitance, reducing switch redundancy jumps, etc., the power consumption savings are limited. The adiabatic CMOS circuit uses an AC pulse power supply to drive the circuit, and uses the inductance in the power supply and the node capacitance in the circuit to form an LC oscillation circuit, so that the energy transmission is power supply→capacitor→power supply, so that the charge injected into the circuit node capacitance is repeated. use, energy recovery is achieved, thereby achieving a significant reduction in...

Claims

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Application Information

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IPC IPC(8): H03K19/00H03K19/003H03K19/0185
CPCH03K19/0013H03K19/00315H03K19/018507
Inventor 张跃军王佳伟丁代鲁潘钊
Owner NINGBO UNIV
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