Semiconductor memory device

Abstract

A semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate, bit line structures crossing over the word lines and extending in a second direction intersecting the first direction, and contact pad structures between the word lines and between the bit line structures in plan view. A spacer structure extends between the bit line structures and the contact pad structures. The spacer structure includes a first air gap extending in the second direction along sidewalls of the bit line structures and a second air gap surrounding each of the contact padstructures and coupled to the first air gap.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor memory devices, and more particularly, to semiconductor memory devices including an air gap-based spacer structure. Background technique [0002] Semiconductor devices may be used in the electronics industry due to their small size, multifunctionality, and / or low manufacturing cost. Semiconductor devices may be classified into semiconductor memory devices that store logical data, semiconductor logic devices that process operations on logical data, and hybrid devices that have functions of both memory devices and logic devices. [0003] Some semiconductor devices may include vertically stacked patterns and contact plugs electrically connecting the stacked patterns to each other. As semiconductor devices have been highly integrated, the distance between patterns and / or the distance between patterns and contact plugs has decreased. Therefore, a parasitic capacitance between patterns and / or be...

AI Technical Summary

Problems solved by technology

Parasitic capacitance can cause performance deterioration of semiconductor devices (e.g., reduction in operating speed)

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