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Formation method of semiconductor structure

A semiconductor and gas technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems affecting the structural performance of semiconductors, low carrier mobility, etc., and achieve the effect of improving performance and improving cleanliness

Active Publication Date: 2020-10-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the semiconductor structure formed in the prior art has the problem of low carrier mobility in the channel in the fin, which affects the performance of the formed semiconductor structure.

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Experimental program
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Embodiment Construction

[0030] It can be seen from the background art that the semiconductor structure in the prior art has the problem of low carrier mobility in the channel. The reason for the low carrier problem in the channel is analyzed in combination with the formation process of the semiconductor structure:

[0031] refer to Figure 1 to Figure 3 , shows a schematic cross-sectional view corresponding to each step of a method for forming a semiconductor structure.

[0032] refer to figure 1 Firstly, a substrate 10 is provided, and the substrate 10 has fins 11 on which an isolation layer 12 is filled between adjacent fins 11 , and the surface of the fins 11 is covered with a shielding oxide layer 13 .

[0033] refer to figure 2 , performing ion implantation on the fin portion 11 . The shielding oxide layer 13 protects the surface of the fin portion 11 from damage during the ion implantation process.

[0034] combined reference image 3 , remove the shielding oxide layer 13 (such as figu...

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PUM

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Abstract

A semiconductor structure forming method comprises the following steps: forming a substrate with a fin portion, wherein the fin portion surface has a protection layer; removing the protection layer; annealing the fin portion surface with removed protection layer; cleaning the fin portion surface after annealing, and exposing the fin portion surface. The method can remove the protection layer, thenmakes annealing treatments for the fin portion surface, and cleans the fin portion surface after annealing, thus exposing the fin portion surface. The annealing treatment can oxidize the fin portionsurface residues, and then the oxidized residues can be removed after cleaning process, thus effectively removing the fin portion surface residues, improving the fin portion surface cleanness, providing a cleaned surface for following steps, and improving the semiconductor structure performances.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the development of integrated circuits to ultra-large-scale integrated circuits, the circuit density inside the integrated circuit is increasing, and the number of components contained in the integrated circuit is also increasing, and the size of the components is also reduced. As the size of the MOS device decreases, the channel of the MOS device shortens accordingly. Due to the shortened channel, the slow-changing channel approximation of MOS devices is no longer valid, and various unfavorable physical effects (especially short channel effects) are highlighted, which degrades device performance and reliability and limits the size of the device. Zoom out further. [0003] In order to further reduce the size of the MOS device, the prior art has developed a multi-faceted gate field effec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/8234
CPCH01L21/823431H01L29/66795
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP