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A method and device for producing granular silicon

A production method and production device technology, applied in the field of granular silicon production methods and devices, can solve the problems of reduced purity in the production of granular silicon, and achieve the effect of ensuring accuracy and sphericity

Active Publication Date: 2018-09-11
ASIA SILICON QINGHAI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for producing granular silicon to improve the problem of reduced purity of granular silicon produced in the prior art
[0006] Another object of the present invention is to provide a production device for granular silicon to improve the problem of reduced purity of granular silicon in the prior art

Method used

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  • A method and device for producing granular silicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The polysilicon charge is processed to obtain a first mixture comprising non-particulate silicon seeds and granular silicon seeds. Specifically include: heating the polysilicon material to form a polysilicon liquid flow, and the heating temperature is 1000°C; dispersing the polysilicon liquid flow into polysilicon droplets, specifically including, using hydrogen gas at 100°C to impact the outflowing polysilicon liquid flow at a speed of 10m / s Dispersing the polysilicon liquid flow into polysilicon droplets; cooling the polysilicon droplets into a first mixture comprising non-granular silicon seeds and granular silicon seeds, specifically comprising, further transporting the polysilicon droplets along with hydrogen to a temperature of 100° C. In the polysilicon droplet cooling device, the polysilicon liquid flow is changed into a first mixture comprising non-granular silicon seed crystals and granular silicon seed crystals.

[0054] sieving the first mixture to separate ...

Embodiment 2

[0060] The polysilicon charge is processed to obtain a first mixture comprising non-particulate silicon seeds and granular silicon seeds. Specifically include: heating the polysilicon material to form a polysilicon liquid flow, and the heating temperature is 1800°C; dispersing the polysilicon liquid flow into polysilicon droplets, specifically including, using hydrogen gas at 100°C to impact the outflowing polysilicon liquid flow at a speed of 10m / s Dispersing the polysilicon liquid flow into polysilicon droplets; cooling the polysilicon droplets into a first mixture comprising non-granular silicon seeds and granular silicon seeds, specifically comprising, further transporting the polysilicon droplets along with hydrogen to a temperature of 100° C. In the polysilicon droplet cooling device, the polysilicon liquid flow is changed into a first mixture comprising non-granular silicon seed crystals and granular silicon seed crystals.

[0061] sieving the first mixture to separate ...

Embodiment 3

[0067] The polysilicon charge is processed to obtain a first mixture comprising non-particulate silicon seeds and granular silicon seeds. Specifically include: heating the polysilicon material to form a polysilicon liquid flow, and the heating temperature is 2300°C; dispersing the polysilicon liquid flow into polysilicon droplets, specifically including, using hydrogen gas at 100°C to impact the outflowing polysilicon liquid flow at a speed of 10m / s Dispersing the polysilicon liquid flow into polysilicon droplets; cooling the polysilicon droplets into a first mixture comprising non-granular silicon seeds and granular silicon seeds, specifically comprising, further transporting the polysilicon droplets along with hydrogen to a temperature of 100° C. In the polysilicon droplet cooling device, the polysilicon liquid flow is changed into a first mixture comprising non-granular silicon seed crystals and granular silicon seed crystals.

[0068] sieving the first mixture to separate ...

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Abstract

The invention relates to the technical field of crystal silicon preparation, in particular to a production method and system of granular silicon. In embodiments of the invention, the production systemof the granular silicon comprises a granular silicon crystal seed preparation system, a granular silicon crystal seed screening system connected with the granular silicon crystal seed preparation system, a granular silicon preparation system connected with the granular silicon crystal seed screening system and a granular silicon screening system connected with the granular silicon preparation system. According to the granular silicon production method provided in the embodiments of the invention, a closed-loop circulating system is adopted to process the granular silicon, so that the gap influencing the purity and sphericity of the polycrystalline silicon particles is small, even if the phenomenon influencing the purity and sphericity of the polycrystalline silicon particles exists, and the particles can be screened in the twice screening processes, so that the precision and sphericity of the granular silicon can be effectively ensured; and the production method of the granular silicon provided in the embodiments of the invention adopts the same technical scheme with the system, thereby having the same beneficial effects.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon preparation, in particular to a method and device for producing granular silicon. Background technique [0002] The improved Siemens method and the fluidized bed method are the main methods for preparing polysilicon. Both methods require polysilicon seeds as the silicon deposition carrier. The improved Siemens method usually uses cylindrical polysilicon thin rods or cube-shaped polysilicon rods as the silicon deposition carrier. , The fluidized bed method uses small-sized silicon particles as the silicon deposition carrier. [0003] Granular silicon seed crystals are usually prepared by mechanical pulverization methods such as grinding and crushing. Taking the preparation of granular silicon seed crystals by the crushing method as an example, during the crushing process of polycrystalline silicon rods, there is a high probability of introducing foreign impurities and surface oxidation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 张宝顺蔡延国鲍守珍陈聪宗冰王体虎
Owner ASIA SILICON QINGHAI