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Structure and manufacturing method of a micro light-emitting diode display

A technology of light-emitting diodes and displays, applied in static indicators, instruments, semiconductor devices, etc., can solve the problems of unstable, comparable, and uneven display of organic materials, reducing production costs, simplifying production processes, and long service life. Effect

Active Publication Date: 2020-08-21
HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] And OLED also has its shortcomings that are difficult to overcome. The organic material itself is not stable, which makes it difficult for OLED display life to be comparable to that of inorganic semiconductor materials.
Moreover, the light decay of OLED is relatively obvious, and long-term work can lead to a large difference in the luminous efficiency of different pixels of the display, resulting in uneven display

Method used

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  • Structure and manufacturing method of a micro light-emitting diode display
  • Structure and manufacturing method of a micro light-emitting diode display
  • Structure and manufacturing method of a micro light-emitting diode display

Examples

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Embodiment 1

[0057] The micro light-emitting diode display of the present invention includes one or more display units, each display unit is composed of several pixels, and each pixel includes two or more sub-pixels.

[0058] figure 1 It shows a partial top view of the same unit containing 3*4 sub-pixels. There is an etching gap between adjacent sub-pixels, and the sub-pixels 11 of the same column in a unit are connected to the same electrode A, and the electrode A is defined as One of the N electrode or the P electrode, the sub-pixels in the same row in one unit are connected to the same electrode B, the electrode B is defined as the other of the N electrode or the P electrode, and the P electrode is used as the address scanning electrode, The N electrodes are used as data driving electrodes to realize row and column driving. In this embodiment, the electrode A is the N electrode 2 , the electrode B is the P electrode 6 , and three sub-pixels 11 constitute one pixel 13 . The diameter of...

Embodiment 2

[0078] Figure 12 It shows a partial top view of the same unit containing 3*4 sub-pixels. There is an etching gap between adjacent sub-pixels, and the sub-pixels 11 of the same column in a unit are connected to the same electrode A, and the electrode A is defined as One of the N electrode or the P electrode, the sub-pixels in the same row in one unit are connected to the same electrode B, and the electrode B is defined as the other of the N electrode or the P electrode, and the row and column driving is realized. In this embodiment, the electrode A is the N electrode 2 , the electrode B is the P electrode 6 , and three sub-pixels 11 constitute one pixel 13 . The diameter of the sub-pixel is 200nm-500 um, and the etching gap is 20nm-100 um.

[0079] In this example, if Figure 13 , 14 As shown, the basic structure of the sub-pixel 1 includes a toning layer 1, an N-type semiconductor layer 3, an active light-emitting region 4, a P-type semiconductor layer 5, a P electrode 6, ...

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Abstract

The invention relates to a micro light-emitting diode display structure, and relates to a making method of the display structure. Each display unit of the display is composed of a plurality of pixels;the display structure is characterized in that each pixel comprises two or more sub-pixels; the sub-pixels in a same column of each unit are connected onto a same electrode A and the sub-pixels in asame row of each unit are connected onto a same electrode B, and column-row driving is achieved. The micro light-emitting diode display structure provided by the invention has the advantages that thelight-emitting diode display structure is free from a backlight source, which is conducive to the thinning of the display; meanwhile, the display, which is made from an inorganic semiconductor epitaxial wafer which is stable in performance, is long in service life, and a status of uneven display can be prevented; and a production process can be simplified to a great extent, and production cost canbe reduced.

Description

technical field [0001] The invention relates to a micro light emitting diode display structure, and also relates to a method for manufacturing the micro light emitting diode display structure. Background technique [0002] Displays are widely used in today's consumer electronics products, especially computer monitors, mobile phone displays, and smart wearable device displays. With the advancement of technology, the original cathode ray tube display has basically been replaced by the thin and light liquid crystal display (LCD), and is developing towards a lighter and thinner direction. The LCD itself does not emit light, and it needs a backlight to display normally, which limits the LCD from being thin enough. In recent years, organic light-emitting diode displays (OLEDs) have risen rapidly. With the advantages of self-illumination and no need for backlight sources, they can be made thinner and are widely used by some large companies in mobile phones, smart watches and other...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15G09F9/33G09G3/32
CPCG09F9/33G09G3/32
Inventor 赵见国孙智江吴自力
Owner HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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