Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for opening holes in a functional layer, an array substrate and a display device

A technology of functional layers and vias, which is applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as complex manufacturing processes, and achieve the effects of improving production efficiency and saving process flow

Active Publication Date: 2020-01-03
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In actual operation, in the hole production of a certain layer, there may be several different depths of hole production, because different depths require different Pattern (pattern) production processes, and the manufacturing process is more complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for opening holes in a functional layer, an array substrate and a display device
  • A method for opening holes in a functional layer, an array substrate and a display device
  • A method for opening holes in a functional layer, an array substrate and a display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0017] The terms "first", "second", etc. in the present invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "include" and "have", as well as any variations thereof, are intended to cover ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

Disclosed are a method for forming holes in a functional layer, an array substrate and a display device. The method comprises: S1, coating a photoresist layer onto a functional layer; S2, forming at least one type of penetrating region on the photoresist layer, wherein the penetrating region is an area where the functional layer is exposed on the photoresist layer; S3, etching the functional layer to form a via hole in the functional layer corresponding to the penetrating region; S4, forming a new type of penetrating region on the photoresist layer; and S5, etching the functional layer to form a new via hole in the functional layer corresponding to the new type of penetrating region and increase the depth of the via hole formed before this etching process; and performing S4 and S5 at least once to form at least two via holes with different depths. In this way, according to the present invention, the function layer is subjected to multiple etching processes using only one photoresist layer to form multiple via holes with different depths, thereby simplifying the process and improving the production efficiency thereof.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for opening holes in a functional layer, an array substrate and a display device. Background technique [0002] Existing display panels include multiple functional layer structures, wherein functional layers generally include metal layers, semiconductor layers, organic layers and inorganic layers, etc., for example, S i o x or S i N x Fabricate the formed insulating layer. [0003] In the manufacture of display panels, holes are generally opened on these functional layers to realize the connection between the functional layers, electrodes or wires. In actual operation, there may be several holes with different depths in the hole production of a certain layer, because different depths require different Pattern (pattern) production processes, and the manufacturing process is more complicated. Contents of the invention [0004] The main technical problem to be solve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L27/12H01L21/77
CPCH01L21/76802H01L27/1248H01L27/1288
Inventor 李唐求赵瑜
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com