Method, system and apparatus for measuring anisotropism in semiconductor forbidden band gap

Abstract

The invention discloses a method, a system and an apparatus for measuring anisotropism in a semiconductor forbidden band gap. The method comprises the following steps: enabling light ray emitted by alight source to form polarized light by virtue of a polarization module, enabling the polarized light to shine on a semiconductor to be detected, converting, by a light splitting grating, the light ray transmitting from the semiconductor to be detected to a transmission spectrum of the semiconductor to be detected, and measuring, by a spectrometer, the transmission spectrum of the semiconductor tobe detected; rotating the polarization module, and measuring, by the spectrometer, the transmission spectrum of different polarization angles in a semiconductor surface to be detected; and calculating a forbidden band gap of different polarization angles in the semiconductor surface to be detected according to the transmission spectrum of different polarization angles in the semiconductor surface. The method, the system and the apparatus have the beneficial effects that by analyzing different absorption characteristics due to the jumping of electrons from different valence bands to a conduction band in the transmission spectrum of the semiconductor to be detected, the anisotropism in the forbidden band gap surface can be measured by utilizing the light source, the polarization module, a sample seat, the light splitting grating and the spectrometer, and a laser light source is not needed, so that the cost is relatively low.

Description

technical field [0001] The invention relates to the field of optoelectronic technology of semiconductor materials, in particular to a method, system and device for measuring the in-plane anisotropy of the semiconductor band gap. Background technique [0002] Semiconductor materials have a complex valence band energy level structure, and when they are used in optoelectronic devices, they often have in-plane anisotropic optical properties due to the transition behavior from the conduction band to the valence band at different depths. This optical anisotropy can be used in polarization display, polarization detection and other fields. Taking the non-polar surface ZnO material as an example, the top of the valence band at the Γ point in the reciprocal space will split into Γ 9 , Γ 7 upper , Γ 7 upper Three children can bring. Under the action of stress, occupying Γ 9 and Γ 7 upper The |X±iY> state of the energy band will separate out the |Y>-like state, correspond...

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Problems solved by technology

The system equipment is expensive, the price is not cheap, and the cost of use is extremely high

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