Substrate processing apparatus

Abstract

The invention relates to a substrate processing apparatus, particularly to a substrate processing apparatus using plasma to form a plurality of concave-convex parts on the surface of a substrate. Theinvention discloses a substrate processing apparatus which is characterized in that the apparatus includes a process chamber (100) with an upper side opening, an upper cover plate (120) combined witha chamber main body (110) to form an airtight processing space (S) and is energized and connected to the ground; a substrate support part (130) which is arranged in the process chamber (100), appliesa plurality of RF power supplies and supports a tray (20) on which a plurality of substrates (10) are arranged; and a gas injection part (140) arranged at the upper side of the processing space (S) and injecting gas for executing substrate processing; a tray cover-sealing part (150) which is arranged in the process chamber (100) in a vertically movable manner and is provided with a plurality of opening parts (152) for gas injected by virtue of the gas injection part (140) to flow in; a vertical movement part (200) which is arranged at the upper side of the process chamber 100 and enables the tray cover-sealing part (150) to move up and down to prevent interference when the tray (20) is mounted into and removed from the process chamber (100); and a plurality of energization components (160)which realizes energized connection between the tray cover-sealing part (150) and the upper cover plate (120).

Description

technical field [0001] The present invention relates to a substrate processing apparatus (Substrate processing apparatus), in particular to a substrate processing apparatus that uses plasma to form a plurality of concavo-convex portions on the surface of a substrate. Background technique [0002] The substrate processing device is a device composed of a vacuum chamber and a substrate support frame. The vacuum chamber forms a closed internal space. The substrate support frame is installed in the vacuum chamber to place the substrate. While injecting processing gas into the internal space, applying The power source thus etches or deposits the surface of the substrate. [0003] The substrates processed by the substrate processing apparatus include wafers for semiconductors, glass substrates for LCD panels, substrates for solar energy, and the like. [0004] As an example of the above-mentioned substrate processing apparatus, there is a substrate processing apparatus in which a...

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Problems solved by technology

[0009] However, the conventional substrate processing equipment transfers the protective member on the insulator tray, and when the RF power is applied, there is no electrical connection with other parts in the chamber during the process, so that the protective member is energized and floated in the process chamber. In the (floating) state, plasma is formed in spaces other than the space between the protection parts and the tray, resulting in a problem of low process efficiency

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